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X-On Electronics has gained recognition as a prominent supplier of BZV55-C43@115 Zener Diodes across the USA, India, Europe, Australia, and various other global locations. BZV55-C43@115 Zener Diodes are a product manufactured by NXP. We provide cost-effective solutions for Zener Diodes, ensuring timely deliveries around the world.

BZV55-C43@115 NXP

BZV55-C43@115 electronic component of NXP
BZV55-C43@115 NXP
BZV55-C43@115 Zener Diodes
BZV55-C43@115  Semiconductors

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See Product Specifications
Part No. BZV55-C43@115
Manufacturer: NXP
Category: Zener Diodes
Description: Diode Zener Single 43V 5% 500mW 2-Pin Mini-MELF T/R
Datasheet: BZV55-C43@115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Manufacturer
Product Category
Vz - Zener Voltage
Voltage Tolerance
Pd - Power Dissipation
Configuration
Mounting Style
Packaging
Operating Temp Range
Package Type
Pin Count
Rev Curr
Type
Operating Temperature Classification
Rad Hardened
Knee Impedance
Zener Test Current
 
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We are delighted to provide the BZV55-C43@115 from our Zener Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BZV55-C43@115 and other electronic components in the Zener Diodes category and beyond.

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BZV55 series Voltage regulator diodes Rev. 5 26 January 2011 Product data sheet 1. Product profile 1.1 General description Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 2 % (BZV55-B) and approximately 5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. 1.2 Features and benefits Non-repetitive peak reverse power Wide working voltage range: dissipation: 40 W nominal 2.4 V to 75 V (E24 range) Total power dissipation: 500 mW Low differential resistance Two tolerance series: 2%and 5% Small hermetically sealed glass SMD package 1.3 Applications General regulation functions 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit forward voltage I =10mA - - 0.9 V V F F 1 non-repetitive peak -- 40 W P ZSM reverse power dissipation 1 t =100 s square wave T =25 C prior to surge p j 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 1 cathode 2 anode ka 1 2 006aaa152 1 The marking band indicates the cathode.BZV55 series NXP Semiconductors Voltage regulator diodes 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BZV55-B2V4 to - hermetically sealed glass surface-mounted SOD80C 1 BZV55-C75 package 2 connectors 1 The series consists of 74 types with nominal working voltages from 2.4 V to 75 V. 4. Marking Table 4. Marking codes Type number Marking code BZV55-B2V4 to BZV55-C75 marking band 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit I forward current - 250 mA F 1 I non-repetitive peak -see ZSM reverse current Table 8 and 9 1 P non-repetitive peak -40 W ZSM reverse power dissipation 2 P total power dissipation T 50 C -400 mW tot amb 2 T 50 C -500 mW tp T storage temperature 65 +200 C stg T junction temperature 65 +200 C j 1 t =100 s square wave T =25 C prior to surge p j 2 Device mounted on a ceramic substrate of 10 10 0.6 mm. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit 1 R thermal resistance from in free air - - 380 K/W th(j-a) junction to ambient R thermal resistance from - - 300 K/W th(j-sp) junction to solder point 1 Device mounted on a ceramic substrate of 10 10 0.6 mm. BZV55 SER All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 26 January 2011 2 of 13

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI
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