CGD1046HI,112 NXP

CGD1046HI 1 GHz, 27 dB gain GaAs high output power doubler Rev. 1 30 July 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. 1.2 Features and benefits Excellent linearity Superior levels of ESD protection Extremely low noise Excellent return loss properties Gain compensation over temperature Rugged construction Unconditionally stable Thermally optimized design Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain Hazardous Substances (RoHS) Integrated ring wave surge protection 1.3 Applications CATV systems operating in the 40 MHz to 1003 MHz frequency range 1.4 Quick reference data Table 1. Quick reference data Bandwidth 40 MHz to 1003 MHz V = 24 V (DC) Z = Z = 75 T =35 C unless otherwise B S L mb specified. Symbol Parameter Conditions Min Typ Max Unit G power gain f = 45 MHz - 25.5 - dB p f = 1003 MHz 26.5 27 28 dB 1 CTB composite triple beat V = 56.4 dBmV at 1003 MHz - 75 65 dBc o 1 CCN carrier-to-composite noise V = 56.4 dBmV at 1003 MHz 57 63 - dBc o 2 I total current - 450 465 mA tot 1 79 NTSC channels f = 54 MHz to 550 MHz + 75 digital channels f = 550 MHz to 1003 MHz ( 6 dB offset) tilt extrapolated to 13.5 dB at 1003 MHz. 2 Direct Current (DC).CGD1046HI NXP Semiconductors 1 GHz, 27 dB gain GaAs high output power doubler 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 input 5 2, 3 common 13 57 9 1 9 5+V B 7, 8 common 23 78 9output sym095 3. Ordering information Table 3. Ordering information Type number Package Name Description Version CGD1046HI - rectangular single-ended package aluminium flange SOT115J 2 vertical mounting holes 2 6-32 UNC and 2 extra horizontal mounting holes 7 gold-plated in-line leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V supply voltage - 30 V B V RF input voltage single tone - 75 dBmV i(RF) 1 V electrostatic discharge voltage Human Body Model (HBM) - 2000 V ESD According JEDEC standard 22-A114E Biased According - 1500 V IEC61000-4-2 T storage temperature 40 +100 C stg T mounting base temperature 20 +100 C mb 1 The ESD pulse of 2000 V corresponds to a class 2 sensitivity level. CGD1046HI All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 30 July 2010 2 of 8