IP4242CZ6,115 NXP

IP4242CZ6 ESD protection for high-speed interfaces Rev. 01 12 March 2009 Product data sheet 1. Product prole 1.1 General description The IP4242CZ6 is designed to protect high-speed interfaces such as HDMI, DVI and DisplayPort interfaces. The device includes high-level ElectroStatic Discharge (ESD) protection diodes for the TMDS signal lines. All TMDS intra-pairs are protected by a special diode conguration offering a low line capacitance of only 0.9 pF. These diodes provide protection to downstream components from ESD voltages up to 8 kV contact according to IEC 61000-4-2, level 4. 1.2 Features n Pb-free, RoHS compliant and free of Halogen and Antimony (Dark Green compliant) n ESD protection for HDMI n All TMDS lines with integrated rail-to-rail clamping diodes for downstream ESD protection of 8 kV according to IEC 61000-4-2, level 4 n Matched 0.5 mm trace spacing n Line capacitance of only 0.9 pF for each channel n 2-channel, 6-terminal UTLP n HDMI 1.3a compliant n DisplayPort compliant 1.3 Applications The IP4242CZ6 is designed for HDMI receiver and transmitter port protection: n TVs, monitors n DVD recorders and players n Notebooks, main board graphics cards and ports n Set-top boxes and game consolesIP4242CZ6 NXP Semiconductors ESD protection for high-speed interfaces 2. Pinning information Table 1. Pinning Pin Symbol Description Simplied outline Graphic symbol 1 TMDS CH1- negative channel 1 ESD protection 1 2 3 1 2 2 TMDS CH1+ positive channel 1 ESD protection 3 GND ground 4 GND ground 5 n.c. not connected 6 5 4 6 n.c. not connected bottom view 3, 4 001aaj776 3. Ordering information Table 2. Ordering information Type number Package Name Description Version IP4242CZ6 XSON6 plastic extremely thin small outline package no leads SOT886 6 terminals body 1 1.45 0.5 mm 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V input voltage GND - 0.5 +5.5 V I V electrostatic discharge all pins to ground -8+8 kV esd voltage IEC 61000-4-2, level 4 contact discharge T storage temperature - 55 +125 C stg T ambient temperature - 40 +85 C amb 5. Characteristics Table 4. Characteristics Symbol Parameter Conditions Min Typ Max Unit 1 V Zener diode breakdown voltage I = 1 mA 6- 9V BRzd I Zener diode reverse leakage current per TMDS channel V = 3.0 V - - 1 A LRzd V forward voltage - 0.7 - V F 1 C TMDS channel capacitance f = 1 MHz V = 2.5 V - 0.9 - pF ch(TMDS) bias 1 C TMDS channel capacitance difference f = 1 MHz V = 2.5 V - 0.15 - pF ch(TMDS) bias 1 C mutual channel capacitance between signal pin and pin n.c. - 0.15 - pF ch(mutual) f = 1 MHz V = 2.5 V bias IP4242CZ6 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 12 March 2009 2 of 9