MMBZ16VALR NXP

MMBZ16VAL High surge current unidirectional double ESD protection diodes 6 November 2017 Product data sheet 1. General description Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The device is designed for ESD and transient overvoltage protection of up to two signal lines. 2. Features and benefits Unidirectional protection of two lines Reverse standoff voltage: V = 13 V RWM Average measured surge robustness: I = 14 A (8/20 s) / I = 2.54 A (10/1000 s) PPM PPM Typical reverse leakage current: I = 0.1 nA RM AEC-Q101 qualified 3. Applications Automotive in-vehicle networks protection Industrial application Power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse standoff T = 25 C - - 13 V RWM j voltage I rated peak pulse t = 10/1000 s [1] [2] - - 1.9 A PPM p current V clamping voltage I = 1.7 A; t = 10/1000 s; T = 25 C [1] [2] - 19.5 23 V CL PP p j [1] According to IEC 61643-321. [2] Measured from pin 1 or 2 to pin 3.Nexperia MMBZ16VAL High surge current unidirectional double ESD protection diodes 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K1 cathode 3 3 2 K2 cathode 3 A common anode 1 2 1 2 TO-236AB (SOT23) 006aaa154 6. Ordering information Table 3. Ordering information Type number Package Name Description Version MMBZ16VAL TO-236AB plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 SOT23 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code[1] MMBZ16VAL %H7 [1] % = placeholder for manufacturing site code MMBZ16VAL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 6 November 2017 2 / 12