PESD5V0R1BDSFYL NXP

PESD5V0R1BDSF Extremely low clamping bidirectional ESD protection diode 11 October 2021 Short data sheet 1. General description Extremely low clamping, extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family. This device is housed in a DSN0603-2 (SOD962-2) leadless, ultra-small Surface-Mounted Device (SMD) package designed to protect one signal line from the damage caused by ESD and other transients. 2. Features and benefits Bidirectional ESD protection of one line Extremely low diode capacitance, C = 0.1 pF at 10 GHz d Extremely low clamping voltage to protect sensitive transceivers Extremely low leakage current < 1 nA at 5 V Extremely low inductance protection path to ground Very high surge robustness: 4.8 A for 8/20 s pulse Extremely low insertion loss: -0.28 dB at 10 GHz Extremely low return loss: -19 dB at 10 GHz 20 Gbps capable Ultra-small SMD package 3. Applications Cellular handsets and accessories Portable electronics Communication systems Computers and peripherals USB4, USB3.2, Thunderbolt4 and HDMI2.1 data lines 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse standoff -5 - 5 V RWM voltage C diode capacitance f = 10 GHz V = 0 V T = 25 C - 0.1 - pF d R ambNexperia PESD5V0R1BDSF Extremely low clamping bidirectional ESD protection diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K1 cathode (diode 1) K1 K2 1 2 2 K2 cathode (diode 2) sym045 Transparent top view DSN0603-2 (SOD962-2) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD5V0R1BDSF DSN0603-2 silicon, leadless ultra small package 2 terminals 0.4 mm pitch SOD962-2 0.6 mm x 0.3 mm x 0.3 mm body PESD5V0R1BDSF SDS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Short data sheet 11 October 2021 2 / 8