PMEG6020AELR NXP

PMEG6020AELR 60 V, 2 A low leakage current Schottky barrier rectifier 19 June 2015 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Extremely low leakage current I = 235 nA R Average forward current: I 2 A F(AV) Reverse voltage: V 60 V R Low forward voltage V = 600 mV F High power capability due to clip-bonding technology High temperature T 175 C j Small and flat lead SMD plastic package AEC-Q101 qualified 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I average forward = 0.5 f = 20 kHz T 165 C - - 2 A F(AV) sp current square wave V reverse voltage T = 25 C - - 60 V R j V forward voltage I = 2 A t 300 s 0.02 - 600 670 mV F F p T = 25 C j I reverse current V = 60 V t 300 s 0.02 - 235 700 nA R R p T = 25 C j Scan or click this QR code to view the latest information for this product SOD123WNXP Semiconductors PMEG6020AELR 60 V, 2 A low leakage current Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 1 1 2 1 2 2 A anode sym001 SOD123W 1 The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG6020AELR SOD123W plastic surface mounted package 2 leads SOD123W 7. Marking Table 4. Marking codes Type number Marking code PMEG6020AELR KE PMEG6020AELR All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 19 June 2015 2 / 15