SA630D/01,112 NXP

SA630 Single-Pole Double-Throw (SPDT) switch Rev. 3 23 July 2014 Product data sheet 1. General description The SA630 is a wideband RF switch fabricated in BiCMOS technology and incorporating on-chip CMOS/TTL compatible drivers. Its primary function is to switch signals in the frequency range DC to 1 GHz from one 50 channel to another. The switch is activated by a CMOS/TTL compatible signal applied to the enable channel 1 pin (ENCH1). The extremely low current consumption makes the SA630 ideal for portable applications. The excellent isolation and low loss makes this device a suitable replacement for PIN diodes. The SA630 is available in an 8-pin SO (surface-mounted miniature) package. 2. Features and benefits Wideband (DC to 1 GHz) Low through loss (1 dB typical at 200 MHz) Unused input is terminated internally in 50 Excellent overload capability (1 dB gain compression point +18 dBm at 300 MHz) Low DC power (170 A from 5 V supply) Fast switching (20 ns typical) Good isolation (off channel isolation 60 dB at 100 MHz) Low distortion (IP3 intercept +33 dBm) Good 50 match (return loss 18 dB at 400 MHz) Full ESD protection Bidirectional operation 3. Applications Digital transceiver front-end switch Antenna switch Filter selection Video switch FSK transmitterSA630 NXP Semiconductors Single-Pole Double-Throw (SPDT) switch 4. Ordering information Table 1. Ordering information Type number Topside Package marking Name Description Version SA630D/01 SA630D SO8 plastic small outline package 8 leads body width 3.9 mm SOT96-1 4.1 Ordering options Table 2. Ordering options Type number Orderable Package Packing method Minimum Temperature part number order quantity SA630D/01 SA630D/01,112 SO8 Standard marking 2000 T = 40 C to +85 C amb *ICs tube - DSC bulk pack SA630D/01,118 SO8 Reel 13 Q1/T1 2500 T = 40 C to +85 C amb *Standard mark SMD 5. Block diagram output/input input/output output/input ENCH1 aaa-013987 Fig 1. Block diagram SA630 All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 3 23 July 2014 2 of 20