HL63193MG Oclaro

Data Sheet HL63193MG AIGaInP Laser Diode 638nm/700mW Outline Features: Shorter wavelength: 638nm Typ. High optical output power: 700mW Small package: f 5.6mm Multi transverse mode TM mode oscillation Applications: Laser projector Show Laser Light source of optical equipment (unit:mm) Internal Circuit 1 3 LD D (flange) 2 1 HL63193MG Rev2. Jan. 31. 2014 Data Sheet Note1) Absolute Maximum Ratings (Tc=25C) Item Symbol Ratings Unit o Note2) Optical output power(1) (-10 to +30 C) Po (1) 700 mW o Note2) Optical output power(2) (+30 to +40 C) Po (2) 550 mW Note2), 3), 4) Pulse optical output power Po(Pulse) 1000 mW LD Reverse Voltage VR(LD) 2 V Note2) Operating Temperature Topr -10 ~ +40 C Storage Temperature Tstg -40 ~ +85 C Note1) These values should not be exceeded under any conditions. Note2) Operating temperature Topr is defined by Case temperature Tc. LD chip temperature is getting higher during operation due to its high current density and small package. Thus, without proper heat dissipation less optical output power than specified one could be observed or it results to LD degradation. It is advised that sufficient heat dissipation should be taken not to exceed the maximum operating temperature during actual operation. Note3) Pulse condition: Pulse frequency 50Hz, duty 33% Note4) The long term reliability such as lifetime is not guaranteed. Optical and Electrical Characteristics (Tc=25C) Parameter Symbol Min Typ Max Unit Test Condition Threshold current Ith - 200 250 mA - Operating current Iop - 820 1000 mA Po=700mW Operating voltage Vop - 2.2 2.6 V Po=700mW Beam divergence 1 9 20 Po=700mW, FWHM q// Parallel to the junction Beam divergence 25 35 45 Po=700mW, FWHM q Perpendicular to the junction Lasing Wavelength lp 632 638 643 nm Po=700mW 2 HL63193MG Rev2. Jan. 31. 2014