Product Information

HL6545MG-A

HL6545MG-A electronic component of Oclaro

Datasheet
Laser Diode MQW-LD 664nm 130mW 3-Pin

Manufacturer: Oclaro
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

74: USD 24.8549 ea
Line Total: USD 1839.26

0 - Global Stock
MOQ: 74  Multiples: 74
Pack Size: 74
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 74
Multiples : 74

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HL6545MG-A
Oclaro

74 : USD 24.8376
100 : USD 20.701
500 : USD 18.8241
1000 : USD 17.2934
5000 : USD 16.0724

     
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HL6545MG ODE2036-00 (M) Visible High Power Laser Diode for Recordable-DVD Rev.0 Aug. 01, 2008 Description The HL6545MG is a 0.65 m band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories, such as H/H type Recordable-DVD, and various other types of optical equipment. Features Package Type Internal Circuit HL6545MG: MG Operating temperature: 75C Max 1 3 (300 mW(pulse), pw = 30 ns, duty = 35 %) Visible light output : p = 660 nm Typ Low operating current: LD Iop(1) = 175 mA Typ (Po = 120 mW) Iop(2) = 350 mA Typ (Po = 300 mW(pulse), pw = 30 ns, duty = 35 %) 2 Absolute Maximum Ratings (T = 25C) C Item Symbol Ratings Unit Optical output power P 130 mW O Pulse optical output power P 300 * mW O(pulse) LD reverse voltage V 2 V R(LD) CW Operating temperature Topr 10 to +75 C (CW) Pulse Operating temperature Topr 10 to +75 C (pulse) Storage temperature Tstg 40 to +85 C Note: Pulse condition : Pulse width = 30 ns , duty = 35 % Optical and Electrical Characteristics (T = 25C) C Item Symbol Min Typ Max Unit Test Conditions Threshold current Ith 60 75 mA Operating current(1) I(1) 175 210 mA P = 120 mW OP O Operating current(2) I(2) 350 mA P = 300 mW(pulse) OP O pw = 30 ns, duty = 35 % Operating voltage V 2.5 3.0 V P = 120 mW OP O Lasing wavelength p 652 660 664 nm P = 120 mW O Beam divergence //(1) 7.5 10.0 12.0 deg. P = 120 mW O parallel to the junction(1) Beam divergence 15 17 19 deg. P = 120 mW O perpendicular to the junction Beam divergence //(2) 7.5 deg. P = 5 mW O parallel to the junction(2) Astigmatism A 1 m P = 5 mW, NA = 0.55 S O Rev.0 Aug. 01, 2008 page 1 of 4 HL6545MG Typical Characteristic Curves Optical Output Power vs. Forward Current Pulse Optical Output Power vs. Forward Current 120 300 T = 25C C T = 25C C T = 0C C 80 200 T = 0C C T = 75C C T = 75C C 40 100 pw = 30ns duty = 35% 0 0 0250 100 15000 300 250 300 400 0210000 500 Forward current, I (mA) F Forward current, I (mA) F Threshold Current vs. Case Temperature Slope Efficiency vs. Case Temperature 100 1.2 1.0 50 0.8 0.6 0.4 0.2 10 0 0810 20 30 40 50 60 700 010 20 30 40 50 60 70 80 Case temperature, T (C) Case temperature, T (C) C C Wavelength vs. Case Temperature Far Feild Pattern 680 1.0 P = 120mW P = 120mW O O 675 T = 25C C 0.8 670 Perpendicular 665 0.6 660 0.4 655 Parallel 650 0.2 645 640 0 0620 400 80 100 40 30 2010 0 102030 40 Case temperature, T (C) Angle, ( ) C Rev.0 Aug. 01, 2008 page 2 of 4 Optical output power, P (mW) Threshold current, Ith (mA) O Lasing Wavelength, p (nm) Slope efficiency, (mW/mA) Optical output power, P (mW) S O(Pulse) Relative intensity

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