X-On Electronics has gained recognition as a prominent supplier of E3Z-D61 Photoelectric Sensors across the USA, India, Europe, Australia, and various other global locations. E3Z-D61 Photoelectric Sensors are a product manufactured by Omron. We provide cost-effective solutions for Photoelectric Sensors, ensuring timely deliveries around the world.

E3Z-D61 Omron

E3Z-D61 electronic component of Omron
E3Z-D61 Omron
E3Z-D61 Photoelectric Sensors
E3Z-D61  Electromechanical

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See Product Specifications
Part No. E3Z-D61
Manufacturer: Omron
Category: Photoelectric Sensors
Description: Photoelectric Sensors NPN DIFF REFLECTIVE
Datasheet: E3Z-D61 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 125.356 ea
Line Total: USD 125.36 
Availability - 14
Ship by Tue. 31 Dec to Thu. 02 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
13
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 155.95
5 : USD 151.9
10 : USD 140.55
25 : USD 134.55
50 : USD 125.0625
75 : USD 123.1875
100 : USD 121.3375

14
Ship by Tue. 31 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 125.356
25 : USD 120.285
50 : USD 114.29

   
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RoHS - XON
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We are delighted to provide the E3Z-D61 from our Photoelectric Sensors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the E3Z-D61 and other electronic components in the Photoelectric Sensors category and beyond.

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Compact Photoelectric Sensor with Built-in Amplifier E3Z CSM E3Z DS E 14 1 The Standard for Photoelectric Sensors with a Secure Track Record of One Million Sold Yearly. Long sensing distance of 30 m for Through-beam Models, 4 m for Retro-reflective Models, and 1 m for Diffuse-reflective Models. Mechanical axis and optical axis offset of less than 2.5 simplifies optical axis adjustment. High stability with unique algorithm that prevents interference of external light. Be sure to read Safety Precautions on page 15. Features Industry s Top-level Sensing Distance with Through-beam Built-in Amplifier A separately sold filter is available to prevent mutual interference for 30 m Through-beam Models with red lights sources and a sensing distance of 10 m. Reflective Models include functionality to prevent Retro-reflective with MSR function Distance-settable mutual interference. 4 m 20 cm Long-distance, Through-beam Sensors with a detection distance of 30 m (response time: 2 ms) are also available. Diffuse-reflective 1 m Low-temperature Operation for Applications in Cold-storage Warehouses A wider ambient operating range from 40 to 55C (main models with connectors). We also provide Sensor I/O Connectors with PUR Cables for high resistance to cold environments. Improved Matching of Optical Axis and Mechanical Axis for 30 m mechanical 2.5 max. Through-beam Models and Retro-reflective Models axis The offset between the optical axis and the mechanical axis is kept within 2.5, so the optical axis can Optical axis be accurately set simply by mounting the Sensor according to the mechanical axis. The receiver will always be in the range of light diffusion. Sensor Protection against Incorrect Wiring Through-beam Model receivers and Reflective Models (except the E3Z-LS) 12 to 24 VDC Brown 1 The Sensor includes output reverse polarity protection. Operation Stability indicator indicator Load (A diode to protect against reverse polarity is added to the output line.) 100 mA (orange) (green) (relay) max. Black Photo- 4 electric Sensor ZD main Blue 3 circuit 0 V Protection for NPN output models Complete Compliance with the EU s RoHS Directive Lead, mercury, cadmium hexachrome, polybrominated biphenyl (PBB), and polybrominated diphenyl ether (PBDE) have all been eliminated. Also, burnable polyethylene packaging has Pb been used. eco 1E3Z Ordering Information Sensors Refer to Dimensions on page 16. Red light Infrared light Model Sensing method Appearance Connection method Sensing distance NPN output PNP output E3Z-T61 2M E3Z-T81 2M Pre-wired (2 m) Emitter E3Z-T61-L 2M Emitter E3Z-T81-L 2M Receiver E3Z-T61-D 2M Receiver E3Z-T81-D 2M 15 m E3Z-T66 E3Z-T86 Standard M8 connector Emitter E3Z-T66-L Emitter E3Z-T86-L Receiver E3Z-T66-D Receiver E3Z-T86-D E3Z-T61A 2M E3Z-T81A 2M Pre-wired (2 m) Emitter E3Z-T61-A-L 2M Emitter E3Z-T81-A-L 2M Through-beam Receiver E3Z-T61-A-D 2M Receiver E3Z-T81-A-D 2M (Emitter + Receiver) 10 m E3Z-T66A E3Z-T86A *3 Standard M8 connector Emitter E3Z-T66-A-L Emitter E3Z-T86-A-L Receiver E3Z-T66-A-D Receiver E3Z-T86-A-D E3Z-T62 2M E3Z-T82 2M Pre-wired (2 m) Emitter E3Z-T62-L 2M Emitter E3Z-T82-L 2M Receiver E3Z-T62-D 2M Receiver E3Z-T82-D 2M E3Z-T67 E3Z-T87 Standard M8 connector Emitter E3Z-T67-L Emitter E3Z-T87-L Receiver E3Z-T67-D Receiver E3Z-T87-D 30m E3Z-T62-G0 2M *4 E3Z-T82-G0 2M *4 Pre-wired (2 m) Emitter E3Z-T62-G0-L 2M Emitter E3Z-T82-G0-L 2M Receiver E3Z-T62-G0-D 2M Receiver E3Z-T82-G0-D 2M Emission stop function E3Z-T67-G0 *4 E3Z-T87-G0 *4 Standard M8 connector Emitter E3Z-T67-G0-L Emitter E3Z-T87-G0-L Receiver E3Z-T67-G0-D Receiver E3Z-T87-G0-D Pre-wired (2 m) E3Z-R61 2M E3Z-R81 2M Retro-reflective with *2 4 m MSR function *1 Standard M8 connector (100 mm) E3Z-R66 E3Z-R86 Pre-wired (2 m) E3Z-D61 2M E3Z-D81 2M 5 to 100 mm (wide view) Standard M8 connector E3Z-D66 E3Z-D86 Pre-wired (2 m) E3Z-D62 2M E3Z-D82 2M Diffuse-reflective 1 m Standard M8 connector E3Z-D67 E3Z-D87 Pre-wired (2 m) E3Z-L61 2M E3Z-L81 2M 9030 mm (narrow beam) Standard M8 connector E3Z-L66 E3Z-L86 20 to 40 mm (BGS min setting) Pre-wired (2 m) E3Z-LS61 2M E3Z-LS81 2M 20 to 200 mm (BGS max setting) 40 min. Incident threshold (FGS min setting) Distance-settable Standard M8 Connector E3Z-LS66 E3Z-LS86 Refer to E3Z-LS. 200 min. Incident threshold (FGS max setting) Pre-wired (2 m) E3Z-LS63 2M E3Z-LS83 2M 2 to 20 mm (BGS min setting) 2 to 80 mm (BGS max setting) Standard M8 connector E3Z-LS68 E3Z-LS88 1 axis E3Z-G61 2M E3Z-G81 2M Pre-wired (2 m) Slit-type Through- 2 axes E3Z-G62 2M E3Z-G82 2M beam 25 mm 1 axis E3Z-G61-M3J E3Z-G81-M3J Refer to E3Z-G. Pre-wired M8 connector 2 axes E3Z-G62-M3J E3Z-G82-M3J Pre-wired (2 m) E3Z-L63 2M E3Z-L83 2M Limited-reflective for 3020 mm transparent glasses Standard M8 connector E3Z-L68 E3Z-J88 *2 Pre-wired (2 m) E3Z-B61 2M E3Z-B81 2M 500 mm (80 mm) Retro-reflective with- Standard M8 connector E3Z-B66 E3Z-B86 out MSR function for *1 *2 Pre-wired (2 m) E3Z-B62 2M E3Z-B82 2M clear, plastic bottles 2 m (500 mm) Standard M8 connector E3Z-B67 E3Z-B87 *1. The Reflector is sold separately. Select the Reflector model most suited to the application. *2. The sensing distance specified is possible when the E39-R1S is used. Values in parentheses indicate the minimum required distance between the Sensor and Reflector. *3. Through-beam Sensors are normally sold in sets that include both the Emitter and Receiver. Orders for individual Emitters and Receivers are accepted. (Modifications are required for some models. Ask your OMRON representative for details.) *4. Models with emission stop function. Refer to page 8, Photoelectric Sensors Technical Guide for details. 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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