X-On Electronics has gained recognition as a prominent supplier of EESB5MW12 Optical Switches, Reflective, Phototransistor Output across the USA, India, Europe, Australia, and various other global locations. EESB5MW12 Optical Switches, Reflective, Phototransistor Output are a product manufactured by Omron. We provide cost-effective solutions for Optical Switches, Reflective, Phototransistor Output, ensuring timely deliveries around the world.

EESB5MW12 Omron

EESB5MW12 electronic component of Omron
EESB5MW12 Omron
EESB5MW12 Optical Switches, Reflective, Phototransistor Output
EESB5MW12  Sensors

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See Product Specifications
Part No. EESB5MW12
Manufacturer: Omron
Category: Optical Switches, Reflective, Phototransistor Output
Description: Optical Switches, Reflective, Phototransistor Output PHOTO MICROSENSOR
Datasheet: EESB5MW12 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 80.9944 ea
Line Total: USD 161.99 
Availability - 760
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
760
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 2
Multiples : 1
2 : USD 80.9944
10 : USD 27.6675
25 : USD 25.7119
50 : USD 23.9794
100 : USD 22.5094

760
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 2
Multiples : 2
2 : USD 109.5044
10 : USD 37.4065
26 : USD 34.7624
50 : USD 32.4201
100 : USD 30.4327

   
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Product Category
RoHS - XON
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We are delighted to provide the EESB5MW12 from our Optical Switches, Reflective, Phototransistor Output category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EESB5MW12 and other electronic components in the Optical Switches, Reflective, Phototransistor Output category and beyond.

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EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E Photomicrosensor with 80-mA Switching Capacity that can be Built into Equipment Built-in amplifier Models available with 5- to 12-VDC and 5- to 15-VDC input CMOS- and TTL-compatible Model with easy adjustment with an external sensitivity adjuster (EE-SB5V) Special connectors (EE-1001/1006) are available 19-mm sensing distance (EE-SB5V-E) Convert to PNP output with EE-2002 conversion connector Ordering Information Appearance Sensing method Sensing distance Output configuration Weight Part number Reflective 5mm Approx. 3.0 gg Light-ON EE-SB5M Dark-ON EE-SB5MC Light-ON EE-SB5V Dark-ON EE-SB5VC 19 mm Light-ON Approx. 2.8 g EE-SB5V-E Specifications RATINGS Item Reflective EE-SB5M EE-SB5MC EE-SB5V(-E) EE-SB5VC Supply voltage 5to12VDC 10%, ripple (p-p): 10% max. 5to15VDC 10%, ripple (p-p): 10% max. Current consumption 36 mA max. 48 mA max. (DC current: I =25mA) F Maximum forward direct current (I ) 30 mA max. F Forward voltage (V ) 1.5 V max. (I =30mA) F F Reverse voltage (V ) 4V max. R Standard reference object White paper with reflection factor of 90% (standard sensing object: 15 x 15 mm) Differential distance 0.1 mm (This table continues on the next page.)EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E Specifications Table -- continued from previous page Item Reflective EE-SB5M EE-SB5MC EE-SB5V(-E) EE-SB5VC Control output At 5 to 24 VDC: 80-mA load current (I ) with a residual voltage of 0.8 V max. C When driving TTL: 40-mA load current (I ) with a residual voltage of 0.4 V max. C Output Transistor on output stage OFF ON OFF ON configuration without detecting object Transistor on output stage ON OFF ON OFF with detecting object Response frequency* 50 Hz Connecting method EE-1001/1006 Connectors soldering terminals Light source GaAs infrared LED with a peak wavelength of 940 nm Receiver Si photo-transistor with a sensing wavelength of 850 nm max. *The response frequency was measured by detecting the following disks rotating. Disk 200 mm dia. 5mm 15 mm 15 mm 15 mm CHARACTERISTICS Operating -25Cto55C (-13F to 131F) Ambient temperature Storage -30Cto80C (-22F to 176F) Ambient humidityy Operating 45% to 85% Storage 35% to 95% Vibration resistance Destruction: 20 to 2,000 Hz (with a peak acceleration of 20Gs), 1.5-mm double amplitude for 4 min each in X, Y, and Z directions 2 Shock resistance Destruction: 500 m/s for 3 times each in X, Y, and Z directions Soldering heat resistance 2605C (See Note.) when the portion between the tip of the terminals and the position 1.5 mm from the terminal base is dipped into the solder for 101 seconds Note: This conforms to MIL-STD-750-2031-1.

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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OMRON AUTOMATION CANADA
OMRON ELECTRONIC COM
OMRON ELECTRONIC COMPONENTS
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