EE-SJ8-B Omron

Photomicrosensor (Transmissive) EE-SJ8-B Dimensions Features 18-mm-tall model with a deep slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. 0.3 High resolution with a 0.5-mm-wide aperture. RoHS Compliant. 6.5 0.5 Absolute Maximum Ratings (Ta = 25C) 20 C-1 0.5 8 0.2 0.5 Item Symbol Rated value 2.1 2.1 BA Emitter Forward current I 50 mA (see note 1) F Pulse forward current I 1 A (see note 2) 180.2 FP 150.2 Reverse voltage V 4 V R 3.5 4 3 min. Four, 0.5 Detector CollectorEmitter V 30 V BA CEO Four, 0.25 voltage 13.90.3 1.94 Cross section BB Cross section AA 0.8 0.8 EmitterCollector V --- ECO K C voltage 1.2 3.2 Collector current I 20 mA C 1.2 AE Collector P 100 mW (11.9) C dissipation (see note 1) Internal Circuit Ambient Operating Topr 25C to 85C K C temperature Storage Tstg 30C to 100C Unless otherwise specified, the tolerances are as shown below. Soldering temperature Tsol 260C (see note 3) A E Dimensions Tolerance Note: 1. Refer to the temperature rating chart if the ambient temper- 3 mm max. 0.3 ature exceeds 25C. Terminal No. Name 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3 < mm 6 0.375 A Anode 3. Complete soldering within 10 seconds. 6 < mm 10 0.45 K Cathode 10 < mm 18 0.55 Ordering Information C Collector 18 < mm 30 0.65 E Emitter Description Model Photomicrosensor (transmissive) EE-SJ8-B Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 940 nm typ. I = 20 mA P F Detector Light current I 0.05 mA min., 5 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter saturated V (sat) --- --- CE voltage Peak spectral sensitivity 850 nm typ. V = 10 V P CE wavelength Rising time tr 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L Falling time tf 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L 278 Photomicrosensor (Transmissive) EE-SJ8-B Engineering Data Light Current vs. Forward Current Forward Current vs. Collector Forward Current vs. Forward Characteristics (Typical) Dissipation Temperature Rating Voltage Characteristics (Typical) 60 150 60 1 Ta = 25C V = 10 V IF CE 50 50 0.8 Ta = 30C PC 40 40 100 Ta = 25C 0.6 Ta = 70C 30 30 0.4 20 20 50 0.2 10 10 0 0 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 10 20 30 40 50 40 20 0 20 40 60 80 100 Ambient temperature Ta (C) Forward voltage V (V) Forward current I (mA) F F Light Current vs. CollectorEmitter Dark Current vs. Ambient Relative Light Current vs. Ambi- Voltage Characteristics (Typical) Temperature Characteristics ent Temperature Characteristics (Typical) (Typical) 1 120 10,000 Ta = 25C I = 20 mA F V = 10 V CE 0.9 V = 10 V 0 lx CE 1,000 110 0.8 I = 50 mA F 0.7 100 100 I = 40 mA 0.6 F 10 0.5 90 I = 30 mA F 0.4 1 I = 20 mA F 80 0.3 0.1 0.2 I = 10 mA F 70 0.01 0.1 0 60 0.001 0123456789 10 40 20 0 20 40 60 80 100 30 20 10 0 10 20 30 40 50 60 70 80 90 CollectorEmitter voltage V (V) CE Ambient temperature Ta (C) Ambient temperature Ta (C) Response Time vs. Load Resist- Sensing Position Characteristics Response Time Measurement ance Characteristics (Typical) (Typical) Circuit 10,000 120 Input I = 20 mA F V = 5 V CC V = 10 V CE 0 Ta = 25C Ta = 25C t 100 Output 90 % (Center of optical axis) 1,000 0 10 % t d 80 t r t f tf IL Input VCC 100 60 40 tr Output 10 RL 20 1 0 0.01 0.1 1 10 -0.5 -0.25 0 0.25 0.5 0.75 1.0 Load resistance R (k ) Distance d (mm) L Photomicrosensor (Transmissive) EE-SJ8-B 279 Response time tr, tf ( s) Forward current I (mA) Light current I (mA) F L Collector dissipation P (mW) C Relative light current I (%) L Forward current I (mA) Relative light current I (%) F L Dark current I (nA) D Light current I (mA) L