Photomicrosensor (Transmissive) EE-SX153 Be sure to read Precautions on page 25. Dimensions Features General-purpose model with a 3.4-mm-wide slot. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. 13.6 6.4 High resolution with a 0.5-mm-wide aperture. 0.5 With a horizontal sensing aperture. 6.2 2 Screw-mounting possible. 0.3 3.40.2 Absolute Maximum Ratings (Ta = 25C) 2.1 0.2 A 3.2 Item Symbol Rated value 3.20.2dia. holes 0.5 Emitter Forward current I 50 mA F 10.2 7.20.2 (see note 1) 6 3 3 Pulse forward cur- I 1 A FP rent (see note 2) 7.8 Two, R1 Reverse voltage V 4 V 1.2 R 0.6 Detector CollectorEmitter V 30 V CEO A Four, 0.8 voltage Four, 1.5 Four, 0.25 7.60.2 EmitterCollector V --- ECO Two, 2.54 K C voltage Cross section AA K C Collector current I 20 mA C A E Collector dissipa- P 100 mW C A E tion (see note 1) Internal Circuit Ambient tem- Operating Topr 25C to 85C perature K C Storage Tstg 40C to 100C Unless otherwise specified, the tolerances are as shown below. Soldering temperature Tsol 260C (see note 3) A E Dimensions Tolerance 3 mm max. 0.3 Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25C. Terminal No. Name 3 < mm 6 0.375 2. The pulse width is 10 s maximum with a frequency of A Anode 6 < mm 10 0.45 100 Hz. K Cathode 3. Complete soldering within 10 seconds. 10 < mm 18 0.55 C Collector E Emitter 18 < mm 30 0.65 Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- 850 nm typ. V = 10 V P CE length Rising time tr 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L Falling time tf 4 s typ. V = 5 V, R = 100 , I = 5 mA CC L L 92 EE-SX153 Photomicrosensor (Transmissive) JAPAN EE-SX 153 Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25C V = 10 V CE IF Ta = 30C PC Ta = 25C Ta = 70C Forward current I (mA) F Forward voltage V (V) Ambient temperature Ta (C) F Relative Light Current vs. Ambi- Light Current vs. CollectorEmitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (Typical) Temperature Characteristics (Typical) (Typical) I = 20 mA Ta = 25C F V = 10 V CE V = 5 V CE 0 lx I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F CollectorEmitter voltage V (V) CE Ambient temperature Ta (C) Ambient temperature Ta (C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 120 120 V = 5 V I = 20 mA CC F I = 20 mA F Ta = 25C VCE = 10 V V = 10 V CE Ta = 25C Ta = 25C 100 100 (Center of optical axis) d 80 80 d 60 60 40 40 20 20 0 0 0.5 0.25 0 0.25 0.5 0.75 1.0 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 Load resistance R (k) L Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX153 Photomicrosensor (Transmissive) 93 Response time tr, tf (s) Light current I (mA) L Forward current I (mA) F Collector dissipation P (mW) C Relative light current I (%) L Relative light current I (%) L Forward current I (mA) F (Center of optical axis) Dark current I (nA) D Relative light current I (%) L Light current I (mA) L
