Photomicrosensor (Reflective) EE-SY1201 Built-in lens achieves 3 mm focal length Small surface mounting type reflection sensor PCB surface mounting type. Be sure to read Safety Precautions on page 3. RoHS Compliant Model Number Structure EE-S Y 1 201 (1) (2) (3) (4) (1) (2) (3) (4) Photomicrosensor Reflective Phototransistor output Serial number Ordering Information Photomicrosensor Minimum Sensing Connecting Appearance Sensing distance Output type Model packing unit method method (Unit: pcs) 2.0 Reflective SMT 3.0 mm Phototransistor EE-SY1201 1,000 3.0 4.0 Note: Order in multiples of minimum packing unit. Ratings, Characteristics and Exterior Specifications Absolute Maximum Ratings (Ta = 25C) Electrical and Optical Characteristics (Ta = 25C) Item Symbol Rated value Unit Value Sym Item Unit Condition bol Emitter MIN. TYP. MAX. 1 Forward current IF 50 * mA Emitter Reverse voltage VR 6V Forward current VF --- 1.2 1.4 V IF = 20 mA Detector Reverse voltage IR --- --- 10 AVR = 6 V Collector-emitter voltage VCEO 35 V Peak emission P --- 950 --- nm --- wavelength Emitter-collector voltage VECO 6V Detector Collector current IC 20 mA IF = 4 mA, VCE = 2 V, 1 Collector dissipation PC 75 * mW Light current IL 60 --- 410 A Aluminum-deposited 1 Total allowable loss Ptot 100 * mW Dark current ID --- 1 100 nA VCE = 20 V, 0 lx Operating temperature Topr -25 to 85 C I IF = 4 mA, VCE = 2 V, Leakage current --- --- 700 nA Storage temperature Tstg -40 to 100 C LEAK with no reflection 2 Reflow soldering temperature Tsol 260 * C Collector-emitter VCE --- --- --- V --- saturated voltage (sat) *1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. Peak spectral P --- 930 --- nm --- *2. Complete soldering within 5 seconds. sensitivity wavelength For reflow soldering, use the conditions given on page 5. VCC = 2 V, RL = 1 k, Rising time tr --- 20 100 s IL = 100 A, d = 4 mm * Exterior Specifications VCC = 2 V, RL = 1 k, Falling time tf --- 20 100 s IL = 100 A, d = 4 mm * Connecting method Weight (g) Material * Refer to Fig 12. Light Current Measurement Setup Diagram on page 2. Case: Epoxy resin SMT 0.025 Sealing resin: Epoxy resin 1EE-SY1201 Engineering Data (Reference values) Fig 1. Forward Current vs. Allowable Fig 2. Forward Current vs. Forward Fig 3. Light Current vs. Forward Current Power Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) 120 100 3000 Ta = 25 C d = 4mm 25 C Ptot 2500 100 25 C 50 C 80 PD, PC 2000 0 C 75 C 10 60 1500 IF 50 1000 40 500 20 15 10 1 0 0 -25 0 25 50 75 85 100 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 30410 20 300 50 Forward current IF (mA) Forward voltage VF (V) Ambient temperature Ta ( C) Fig 4. Light Current vs. Collector-Emitter Fig 5. Relative Light Current vs. Ambient Fig 6. Dark Current vs. Ambient Voltage Characteristics (Typical) Temperature Characteristics (Typical) Temperature Characteristics (Typical) -6 3.5 120 10 Measurement condition: VCE = 20 V Vce = 0 to 12 V IF = 30 mA IF = 2, 4, 7, 10, 20, 30 mA 3.0 d = 4 mm 100 Ta = 25 C -7 10 2.5 80 IF = 20 mA 2.0 -8 60 10 1.5 40 IF = 10 mA 1.0 -9 10 IF = 7 mA 20 0.5 IF = 4 mA IF = 2 mA -10 0.0 0 10 -25 0 25 50 75 85 100 0 255075 100 03192 45 6718 10112 Ambient temperature Ta ( C) Ambient temperature Ta ( C) Collector-Emitter voltage VCE (V) Fig 7. Response Time vs. Load Fig 8. Relative Light Current vs. Fig 9. Relative Light Current vs. Card Resistance Characteristics (Typical) Distance Characteristics (Typical) Moving Distance Characteristics (Typical) 100 1,000 100 VCE = 5 V White Black IF = 4 mA IC = 100 A VCE = 2 d Ta = 25 C Ta = 25 C 80 80 L 100 t f 60 60 t r IF = 4 mA 40 40 t d VCE = 2 V 10 d = 3 mm Aluminum-deposited surface 20 20 t s d 1 0 0 -6 -5 -4 -3 -2 -1 0 1 2 3 4 0.1 1 10 100 02 4 6 8 10 Load resistance RL (k ) Distance d (mm) Card moving distance d (mm) Fig 10. Relative Light Current vs. Card Fig 11. Response Time Measurement Fig 12. Light Current Measurement Moving Distance Characteristics (Typical) Circuit Setup Diagram 100 White Black d Reflector plate 80 L Vcc Aluminum-deposited surface RL Input 60 Output Test 10% Glass d terminal 40 IF = 4 mA VCE = 2 V d = 3 mm 90% 20 t t d s tr tf 0 -6 -5 -4 -3 -2 -1 0 1 2 3 4 Card moving distance d (mm) 2 Response time ( A) Relative light current IL (%) Light current IL (mA) Forward current IF (mA) Allowable loss PD PC Ptot (mW) Relative light current IL (%) Relative light current IL (%) Forward current IF (mA) Light current IL ( A) Relative light current IL (%) Dark current ID (A)