G3VM- MT MOS FET Relay Module 1 pA max. leakage current* contributes to high device reliability Equipped with a T-switch function to achieve fA-level minimal leakage current and contributes to measurement performance equivalent to conventional reed relays Contact form: 1a (SPST-NO) + T-switch function Contributes to reduction of the mounting space on the printed circuit board with a small package * VOFF = 20 V, 50 V, 80 V RoHS Compliant M Application Example o d Semiconductor test equipment u l e Package (Unit: mm) Model Number Legend G 3 G3VM- V 1234 50.1 M 1. Load voltage 2. Contact form 3. Package 4. Special function 2.70.2 I 2: 20 V 1: 1a (SPST-NO) M: MOS FET T: T switch function M Relay Note: See Device 6: 60 V T Function Modes Module 10: 100 V 3.750.1 on page 5. Ordering Information Continuous load current Tape cut packaging Tape packaging (peak value) * Load voltage Package Contact form Terminals Minimum Minimum (peak value) * Main Sub Model package Model package quantity quantity 20 V 200 mA G3VM-21MT G3VM-21MT (TR01) Surface- 1a Module mounting 60 V 800 mA 400 mA G3VM-61MT 1 pc. G3VM-61MT (TR01) 100 pcs. (SPST-NO) Terminals 100 V 550 mA G3VM-101MT G3VM-101MT (TR01) Note: 1. To order tape packaging for relays with surface-mounting terminals, add(TR01 to the end of the model number. Tape-cut packaging is packaged without humidity resistance. Use manual soldering to mount them. Note: 2. 500 pcs./reel packing is also available. Please contact your OMRON sales representative. * The AC peak and DC values are given for the load voltage and continuous load current. Absolute Maximum Rating (Ta = 25C) Item Symbol G3VM-21MT G3VM-61MT G3VM-101MT Unit Measurement conditions LED forward current for main control IF Main 30 mA LED forward current for sub control IF Sub 30 mA Input LED forward current reduction rate IF/C -0.3 mA/C Ta 25C LED reverse voltage VR 5V Junction temperature Tj 125 C Load voltage (AC peak/DC) VOFF 20 60 100 V IO Main 800 Continuous load current 200 550 mA (ACpeak/DC) IO Sub 400 Output IO Main/C -8 ON current reduction rate -2 -5.5 mA/C Ta 25C IO Sub/C -4 Pulse ON current IOP 600 2400 1650 mA t=100 ms, Duty=1/10 Junction temperature Tj 125 C Dielectric strength between I/O * VI-O 500 Vrms AC for 1 min Ambient operating temperature Ta -40 to 110 C With no icing or condensation Ambient storage temperature Tstg -40 to 125 C Soldering temperature -260 C 10 s Note: The product structure is sensitive to static electricity. When handling it, be sure to take measures against static electricity for the workbench, workers, soldering iron, and soldered mounted devices. * The dielectric strength between the input and output was checked by applying voltage between all pins as a group on the input (LED) side and all pins as a group on the output side (MOSFET). 1G3VM- MT MOS FET Relay Module Electrical Characteristics (Ta=25C) Item Symbol G3VM-21MT G3VM-61MT G3VM-101MT Unit Measurement conditions Minimum 2.2 LED forward voltage VF Main Typical 2.54 2.42 IF Main=10 mA for main control Maximum 2.8 V Minimum 1.1 LED forward voltage VF Sub Typical 1.27 1.21 IF Sub=10 mA for sub control Maximum 1.4 Input Capacitance between CT Main Typical 15 main control terminals pF V=0, f=1 MHz Capacitance between CT Sub Typical 30 sub control terminals Trigger LED forward IFT Main/Sub Maximum 3 IO=100 mA current mA Release LED forward IFC Main/Sub Minimum 0.1 IOFF=10 uA current Typical 80.4 0.8 IF Main=5 mA, t<1 s M Maximum resistance RON Main IO Main=Continuous load current o with output ON Maximum 12 0.8 1.5 rated value d u G3VM-21MT: VDD=20 V Current leakage when G3VM-61MT: VDD=50 V l Output the main line is open and ILEAK Maximum 1pA G3VM-101MT: VDD=80 V e sub line is close *1 *1 G Typical 0.6 38 23 Capacitance between COFF 3 terminals Maximum1- pF V=0, f=1 MHz V Capacitance between I/O terminals CI-O Typical 1 M I Minimum 1000 Insulation resistance RI-O M VI-O=500 VDC, RoH 60% between I/O terminals 8 Typical 10 M Typical -0.75 0.6 T G3VM-21MT: VDD=10V, Main line Turn-ON time tON Main Maximum 0.3 2.5 G3VM-61MT/101MT: VDD=20V, IF Main=5 mA, RL=200 Typical -0.04 Main line Turn-OFF time tOFF Main *2 Maximum 0.3 0.5 ms Typical -0.2 0.6 G3VM-21MT: VDD=10V, Sub line Turn-ON time tON Sub G3VM-61MT/101MT: VDD=20V, Maximum 0.312.5 IF Main=5 mA, IF Sub=5 mA, Typical -0.04 RL=200 Sub line Turn-OFF time tOFF Sub *3 Maximum 0.3 0.5 *1. ILEAK measurement condition V DD x1 V DD Force Guard A A 6 4 6 5 4 5 MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET RELAY C RELAY B RELAY A RELAY C RELAY B RELAY A OR 3 3 12 12 I I F F *2. Turn-ON and Turn-OFF Times (Main line) *3. Turn-ON and Turn-OFF Times (Sub line) V V V V OUT DD OUT DD I F3 6 5 4 6 5 4 MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET I I F F2 RELAY C RELAY B RELAY A RELAY C RELAY B RELAY A 90% 90% V V OUT OUT 10% 10% 12 3 12 3 t t t t ON OFF ON OFF I I I F F2 F3 2