CAV25512H 512-Kb SPI Serial CMOS EEPROM Description The CAV25512H is a 512Kb Serial CMOS EEPROM device internally organized as 64Kx8 bits. This features a 128byte page www.onsemi.com write buffer and supports the Serial Peripheral Interface (SPI) protocol. The device is enabled through a Chip Select (CS) input. In addition, the required bus signals are clock input (SCK), data input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial communication with the CAV25512H device. The device features software and hardware write protection, including partial as UDFN8 well as full array protection. HU5 SUFFIX OnChip ECC (Error Correction Code) makes the device suitable CASE 517BU for high reliability applications. Features PIN CONFIGURATION Automotive Temperature Grade 1 (40C to +125C) 1 V CS CC 10 MHz SPI Compatible SO HOLD 2.5 V to 5.5 V Supply Voltage Range WP SCK SPI Modes (0,0) & (1,1) 128byte Page Write Buffer V SI SS Additional Identification Page with Permanent Write Protection UDFN (HU5) Selftimed Write Cycle (Top View) Hardware and Software Protection Block Write Protection PIN FUNCTION 1 1 Protect / , / or Entire EEPROM Array 4 2 Pin Name Function Low Power CMOS Technology CS Chip Select 1,000,000 Program/Erase Cycles SO Serial Data Output 100 Year Data Retention WP Write Protect UDFN 8lead Package V Ground This Device is PbFree, Halogen Free/BFR Free, and RoHS SS Compliant SI Serial Data Input V CC SCK Serial Clock HOLD Hold Transmission Input SI V Power Supply CC CS CAV25512H SO WP ORDERING INFORMATION HOLD See detailed ordering and shipping information in the package dimensions section on page 12 of this data sheet. SCK V SS Figure 1. Functional Symbol Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2016 Rev. 0 CAV25512H/DCAV25512H Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3, 4) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C. CC 4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte has to be written, 4 bytes (including the ECC bits) are reprogrammed. It is recommended to write by multiple of 4 bytes in order to benefit from the maximum number of write cycles. Table 3. D. C. OPERATING CHARACTERISTICS (V = 2.5 V to 5.5 V, T = 40C to +125C, unless otherwise specified) CC A Symbol Parameter Test Conditions Min Max Units I Supply Current (Read Mode) Read, SO open, f = 10 MHz 3 mA CCR SCK I Supply Current (Write Mode) Write, CS = V 2 mA CCW CC I Standby Current V = GND or V , CS = V , WP = V , 3 A SB1 IN CC CC CC HOLD = V , V = 5.5 V CC CC I Standby Current V = GND or V , CS = V , WP = GND, 5 A SB2 IN CC CC HOLD = GND, V = 5.5 V CC I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage Current CS = V V = GND or V 2 2 A LO CC OUT CC V Input Low Voltage 0.5 0.3V V IL CC V Input High Voltage 0.7V V + 0.5 V IH CC CC V Output Low Voltage I = 3.0 mA 0.4 V OL OL V Output High Voltage I = 1.6 mA V 0.8V V OH OH CC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2