Ordering number : EN6567A DBF250
SANYO Semiconductors
DATA SHEET
Diffused Junction Silicon Diode
DBF250
25A Single-Phase Bridge Rectifier
Features
Glass passivation for high reliability.
Plastic molded structure.
Peak reverse voltage : V =200, 600V.
RM
Average output current : I =25A.
O
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Symbol Conditions DBF250C DBF250G Unit
Peak Reverse Voltage V 200 600 V
RM
Tc=98C, With heatsink 25 A
Average Output Current I
O
Ta=25C, Without heatsink 3.5 A
Surge Forward Current I 50Hz sine 1cycle peak value 350 A
FSM
Junction Temperature Tj 150 C
Storage Temperature Tstg --40 to +150 C
Dilective Strength Voltage Vdis Terminals tc case, AC 1 minute 2.5 kV
Tightening Torque TOR ( ): recommended value 0.8(0.5) Nm
Electrical Characteristics at Ta=25C Per Constituent element of bridge.
Ratings
Parameter Symbol Conditions Unit
min typ max
Forward Voltage V I =12.5A 1.05 V
F F
Reverse Current I V =At each V 10 A
R R RM
Thremal Resistance(Junction-Ambient) Rth(j-a) Without heatsink 22 C / W
Thremal Resistance(Junction-Case) Rth(j-c) With heatsink 1 C / W
Thremal Resistance(Junction-Lead) Rth(j-l) Without heatsink 5 C / W
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83006RB MS IM TC-00000159 / 42800 GI IM No.6567-1/3Resistive load
DBF250
Package Dimensions Electrical Connection
unit : mm (typ)
1191A
4.6
30.0
3.2
3.6
2.5
2.7
2.2
0.7
1.0
+ -
10.0 7.5 7.5
I -- V I -- Ta
F F O
5
3
4
2
10
7
3
5
PCB
3
2
2
1.0
7
5
1
3
2
0.1 0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 20 40 60 80 100 120 140 160
Forward Voltage, V -- V Ambient Temperature, Ta -- C
IT02100 IT02101
F
I -- Tc P -- I
O F O
70
30
Fin
Tc
Tc
60
25
50
20
40
15
30
10
20
5
10
0
0
80 90 100 110 120 130 140 150 160
0 4 8 12 16 20 24 28
Case Temperature, Tc -- C IT02102 Average Output Current, I -- A IT02103
O
No.6567-2/3
Resistive load
Sine wave
Tj=150C
25C
Average Output Current, I -- A Forward Current, I -- A
O F
4.0
5.0
17.5 20.0
11.0
Average Forward Power Dissipation, PF -- W Average Output Current, I -- A
O