Silicon Carbide Schottky Diode 650 V, 8 A FFSD0865A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of 1, 2, 4. Cathode 3. Anode power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and Schottky Diode reduced system size and cost. Features 4 Max Junction Temperature 175C Avalanche Rated 49 mJ High Surge Current Capacity 2 1 Positive Temperature Coefficient Ease of Paralleling 3 No Reverse Recovery/No Forward Recovery DPAK3 (TO252, 3 LD) This Device is PbFree, Halogen Free/BFR Free and RoHS CASE 369AS Compliant MARKING DIAGRAM Applications General Purpose SMPS, Solar Inverter, UPS Y&Z&3&K Power Switching Circuits FFS D0865A Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSD0865A = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: January, 2020 Rev. 3 FFSD0865A/DFFSD0865A Table 1. ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter FFSD0865A Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 49 mJ AS I Continuous Rectified Forward Current T < 159C 8 A F C Continuous Rectified Forward Current T < 135C 15 C I NonRepetitive Peak Forward Surge Current T = 25C, 10 s 750 A F,Max C 730 A T = 150C, 10 s C I NonRepetitive Forward Surge Current HalfSine Pulse, t = 8.3 ms 49 A F,SM p I Repetitive Forward Surge Current HalfSine Pulse, t = 8.3 ms 28 A F,RM p Ptot Power Dissipation T = 25C 125 W C T = 150C 21 W C T , T Operating and Storage Temperature Range 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 49 mJ is based on starting T = 25C, L = 0.5 mH, I = 14 A, V = 50 V. AS J AS Table 2. THERMAL CHARACTERISTICS Symbol Parameter Rating Unit R Thermal Resistance, JunctiontoCase, Max. 1.2 C/W JC Table 3. OPERATING CHARACTERISTICS (T = 25C, unless otherwise noted) C Symbol Parameter Test Conditions Min Typ Max Unit V Forward Voltage I = 8 A, T = 25C 1.50 1.75 V F F C I = 8 A, T = 125C 1.6 2.0 F C I = 8 A, T = 175C 1.72 2.4 F C I Reverse Current V = 650 V, T = 25C 200 A R R C V = 650 V, T = 125C 400 R C V = 650 V, T = 175C 600 R C Q Total Capacitive Charge V = 400 V 27 nC C C Total Capacitance V = 1 V, f = 100 kHz 463 pF R V = 200 V, f = 100 kHz 48 R V = 400 V, f = 100 kHz 38 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PART MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFSD0865A FFSD0865A DPAK3 N/A 13 N/A 2500 units For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D www.onsemi.com 2