FODM352 Product Preview Photodarlington Optocoupler with a Base-Emitter Resistor in a www.onsemi.com 4-Pin Full Pitch Mini-Flat Package Description The FODM352 consists of one gallium arsenide (GaAs) infrared light emitting diode, optically coupled to a photodarlington output with a baseemitter resistor, in a compact, miniflat, 4pin package. The inputoutput isolation voltage, V , is rated at 3,750 VAC . ISO RMS MFP4 CASE 100AP Features Current Transfer Ratio Min 1000% at I = 1 mA, F MARKING DIAGRAM V = 2 V, T = 25C CE A Pin 1 Safety and Regulatory Approvals: UL1577, 3750 VAC for 1 min RMS DIN EN/IEC6074755, 565 V Peak Working Insulation Voltage ON Applicable to Infrared Reflow, 260C 352 VXYYR Typical Applications Power Supply Regulators 352 = Specific Device Code Digital Logic Inputs V = DIN EN/IEC6074755 Option Microprocessor Inputs X = OneDigit Year Code Programmable Controllers YY = Work Week R = Assembly Package Code This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. PIN CONNECTIONS ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: April, 2019 Rev. P0 FODM352/DFODM352 Table 1. SAFETY AND INSULATIONS RATING As per DIN EN/IEC 60747 55, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated < 150 V IIV RMS Mains Voltage < 300 V IIII RMS Climatic Classification 55/110/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit InputtoOutput Test Voltage, Method A, V x 1.6 = V , Type and Sample 904 V V PR IORM PR peak Test with t = 10 s, Partial Discharge < 5 pC m InputtoOutput Test Voltage, Method B, V x 1.875 = V , 100% Produc- 1060 V IORM PR peak tion Test with t = 1 s, Partial Discharge < 5 pC m V Maximum Working Insulation Voltage 565 V IORM peak V Highest Allowable OverVoltage 6,000 V IOTM peak External Creepage 5 mm External Clearance 5 mm DTI Distance Through Insulation (Insulation Thickness) 0.4 mm T Case Temperature (Note 1) 150 C S I Input Current (Note 1) 200 mA S,INPUT P Output Power (Note 1) 300 mW S,OUTPUT 9 R Insulation Resistance at T , V = 500 V (Note 1) > 10 IO S IO 1. Safety limit values maximum values allowed in the event of a failure. Table 2. ABSOLUTE MAXIMUM RATINGS (Note 2) T = 25C unless otherwise specified. A Symbol Parameter Value Units T Storage Temperature 55 to +150 C STG T Operating Temperature 55 to +110 C OPR T Junction Temperature 55 to +125 C J T Lead Solder Temperature (Refer to Reflow Temperature Profile) 260 for 10 sec C SOL EMITTER I Continuous Forward Current 50 mA F(average) V Reverse Input Voltage 6 V R PD Power Dissipation (Note 3) 70 mW LED DETECTOR I Continuous Collector Current 150 mA C(average) V CollectorEmitter Voltage 300 V CEO V EmitterCollector Voltage 0.1 V ECO PD Collector Power Dissipation (Note 3) 150 mW C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 3. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside these ratings. www.onsemi.com 2