X-On Electronics has gained recognition as a prominent supplier of N24S128C4DYT3G EEPROM across the USA, India, Europe, Australia, and various other global locations. N24S128C4DYT3G EEPROM are a product manufactured by ON Semiconductor. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

N24S128C4DYT3G ON Semiconductor

N24S128C4DYT3G electronic component of ON Semiconductor
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Part No. N24S128C4DYT3G
Manufacturer: ON Semiconductor
Category: EEPROM
Description: EEPROM NEW OPN N24S128C4DYT3G - 128KB I2C EEPROM IN THIN CSP PACKAGE
Datasheet: N24S128C4DYT3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.3093
10 : USD 0.7125
25 : USD 0.5154
100 : USD 0.4569
250 : USD 0.4535
500 : USD 0.4491
1000 : USD 0.4424
5000 : USD 0.4245
N/A

   
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We are delighted to provide the N24S128C4DYT3G from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the N24S128C4DYT3G and other electronic components in the EEPROM category and beyond.

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N24S128 2 128 Kb I C CMOS Serial EEPROM with Software Write Protect and Programmable Device www.onsemi.com Address Description The N24S128 is a 128Kb Serial CMOS EEPROM, internally organized as 816,384 words of 8 bits each. WLCSP4 C4 SUFFIX They feature a 64-byte page write buffer and support both the CASE 567VY 2 Standard (100kHz), Fast (400kHz) and Fast-Plus (1MHz) I C protocol. PIN CONFIGURATION The devices also feature a 128-bit factory-set read-only Unique ID, a 64-byte Secure Data Page that can be permanently locked against 12 future changes, and Software Write Protection of the entire array. A V SCL CC A Device Configuration Register enables the user to specify the last 3 bits of the Device Address, allowing up to eight N24S128 devices to be addressed on the same bus. B SDA V SS Features (Top View) 2 Supports Standard, Fast and Fast-Plus I C Protocol 1.7 V to 5.5 V Supply Voltage Range PIN FUNCTION 64-byte Page Write Buffer Pin Name Function Lockable Secure Data Page SDA Serial Data Input/Output User Programmable Write Protection SCL Serial Clock Input User Programmable Device Address 2 V Power Supply CC Schmitt Triggers and Noise Suppression Filters on I C Bus Inputs V Ground (SCL and SDA) SS Low Power CMOS Technology 1,000,000 Program/Erase Cycles MARKING DIAGAM 100 Year Data Retention X Industrial Temperature Range: 40C to +85C YW Ultra-thin 4-ball WLCSP Package These Devices are PbFree, Halogen Free/BFR Free and are RoHS X = Specific Device Code Compliant* (See Ordering Information Table) Y = Production Year (Last Digit) W = Production Week Code V CC ORDERING INFORMATION See detailed ordering and shipping information on page 9 of N24S128 this data sheet. SCL SDA *For additional information on our PbFree strategy and soldering details, please download the V SS ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Figure 1. Functional Symbol Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: April, 2019 Rev. 2 N24S128/DN24S128 Table 1. ABSOLUTE MAXIMUM RATINGS Parameter Rating Unit Storage Temperature 65 to +150 C Voltage on Any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 1.0 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Unit N (Note 3) Endurance 1,000,000 Program/Erase Cycles END T (Note 4) Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25 C CC 4. T = 55 C A Table 3. DC AND AC OPERATING CONDITIONS Supply Voltage / Temperature Range Operation V = 1.7 V to 5.5 V / T = 40C to +85C READ / WRITE CC A V = 1.6 V to 5.5 V / T = 40C to +85C READ CC A V = 1.6 V to 5.5 V / T = 0C to +85C WRITE CC A Table 4. D.C. OPERATING CHARACTERISTICS Symbol Parameter Test Conditions Min Max Unit Read Current Read, f = 400 kHz/1 MHz 1 mA I CCR SCL I Write Current 2 mA CCW All I/O Pins at GND or V I Standby Current V < 2.5 V 1 A CC CC SB V > 2.5 V 2 CC Pin at GND or V I I/O Pin Leakage 2 A L CC V 2.5 V V Input Low Voltage 0.5 0.3 V V CC CC IL1 V Input Low Voltage V < 2.5 V 0.5 0.25 V V IL2 CC CC V Input High Voltage V 2.5 V 0.7 V V + 1 V IH1 CC CC CC V Input High Voltage V < 2.5 V 0.75 V V + 1 V IH2 CC CC CC V Output Low Voltage V 2.5 V, I = 3.0 mA 0.4 V OL1 CC OL V Output Low Voltage V < 2.5 V, I = 1.0 mA 0.2 V OL2 CC OL Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Table 5. PIN IMPEDANCE CHARACTERISTICS Symbol Parameter Conditions Max Unit C (Note 5) SDA I/O Pin Capacitance V = 0 V 8 pF IN IN C (Note 5) Input Capacitance (other pins) V = 0 V 6 pF IN IN 5. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. www.onsemi.com 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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