DATA SHEET www.onsemi.com MARKING Single 6 A High-Speed, DIAGRAM Low-Side SiC MOSFET 1 24 XXXXX Driver QFN24 XXXXX WETTABLE FLANK ALYW CASE 484AE NCV51705 XXXXXX = Specific Device Code The NCV51705 driver is designed to primarily drive SiC MOSFET A = Assembly Location transistors. To achieve the lowest possible conduction losses, the L = Wafer Lot Y = Year driver is capable to deliver the maximum allowable gate voltage to the W = Work Week SiC MOSFET device. By providing high peak current during turnon = PbFree Package and turnoff, switching losses are also minimized. For improved (Note: Microdot may be in either location) reliability, dV/dt immunity and even faster turnoff, the NCV51705 can utilize its onboard charge pump to generate a user selectable negative voltage rail. PIN CONNECTIONS For full compatibility and to minimize the complexity of the bias solution in isolated gate drive applications the NCV51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high speed opto isolators. IN+ 1 18 OUTSRC The NCV51705 offers important protection functions such as IN 2 17 OUTSRC undervoltage lockout monitoring for the bias power. XEN 3 16 PGND NCV51705 Features (Top View ) SGND 4 15 PGND Automotive Qualified to AECQ100 with Grade 1 Temperature VEESET 5 14 OUTSNK Range VCH 6 13 OUTSNK High Peak Output Current with Split Output Stages to Allow Independent TurnON/TurnOFF Adjustment Source Capability: 6 A Sink Capability: 6 A Extended Positive Voltage Rating for Efficient SiC MOSFET Operation during the Conduction Period ORDERING INFORMATION Adjustable, Onboard Regulated Charge Pump Device Package Shipping Negative Voltage Drive for Fast Turnoff NCV51705MNTWG QFN24 3000 / Tape & Builtin Negative Charge Pump (PbFree) Reel Accessible 5 V Reference / Bias Rail for Digital Oscillator Supply For information on tape and reel specifications, Adjustable UnderVoltage Lockout including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Desaturation Function Brochure, BRD8011/D. Small & Low Parasitic Inductance QFN24 Package with Wettable Flank Typical Applications Driving SiC MOSFET for Automotive Applications Automotive Inverters, Converter, and Motor Drivers PFC, AC to DC and DC to DC Converters Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: November, 2021 Rev. 3 NCV51705/D C+ 7 24 UVSET C 8 23 V5V PGND 9 22 DESAT PGND 10 21 SVDD VEE 11 20 VDD VEE 12 19 VDDNCV51705 20V IN+ OUTSRC 1 18 IN OUTSRC 2 17 Controller XEN PGND 3 16 NCV51705 SGND PGND (Top View ) 4 15 VEESET OUTSNK 5 14 VCH OUTSNK 6 13 VEESET = 5 V VEE = 5 V VEESET = OPEN VEE = 3.4 V VEESET = SVDD VEE = 8 V VEESET = SGND VEE = OFF C FLY C VEE (a) Low Side Switching Configuration CONTROLLER BIAS(3.3 V or 5 V) ISOLATOR BIAS 20 V BIAS (isolated) PWM HS NCV51705 Digital Controller FAULT HS XEN HS Digital ENABLE Isolators ISOLATOR BIAS 20 V BIAS (isolated) PWM LS FAULT LS NCV51705 XEN LS Isolation Boundary (b) Half Bridge Switching Configuration Figure 1. Typical Application Schematics www.onsemi.com 2 C+ UVSET 7 24 C V5V 8 23 PGND DESAT 9 22 SVDD PGND 10 21 VEE VDD 11 20 VEE VDD 12 19