Self-Protected Low Side Driver with In-Rush Current Management NCV8415 The NCV8415 is a three terminal protected LowSide Smart www.onsemi.com Discrete FET. The protection features include Delta Thermal Shutdown, overcurrent, overtemperature, ESD and integrated DraintoGate clamping for overvoltage protection. The device also V I MAX DSS D (Clamped) R TYP (Limited) DS(ON) offers fault indication via the gate pin. This device is suitable for harsh automotive environments. 42 V 80 m 10 V 11 A Features ShortCircuit Protection with InRush Current Management Delta Thermal Shutdown Thermal Shutdown with Automatic Restart SOT223 DPAK CASE 318E CASE 369C Overvoltage Protection STYLE 3 STYLE 2 Integrated Clamp for Overvoltage Protection and Inductive Switching MARKING DIAGRAMS ESD Protection 4 dV/dt Robustness AYW Analog Drive Capability (Logic Level Input) 8415 NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Grade 1 Pin Marking Qualified and PPAP Capable 1 23 Information These Devices are PbFree and are RoHS Compliant SOT223 1 = Gate 2 = Drain 3 = Source Typical Applications 4 = Drain 1 Switch a Variety of Resistive, Inductive and Capacitive Loads AYWW 2 NCV 4 Can Replace Electromechanical Relays and Discrete Circuits 8415G 3 Automotive / Industrial Drain DPAK A = Assembly Location Overvoltage Y = Year Gate Protection W, WW = Work Week Input G or = PbFree Package ESD Protection (Note: Microdot may be in either location) Temperature Current Current ORDERING INFORMATION Limit Limit Sense Device Package Shipping NCV8415DTRKG DPAK 2500 / Source (PbFree) Tape & Reel Figure 1. Block Diagram NCV8415STT1G SOT223 1000 / (PbFree) Tape & Reel NCV8415STT3G SOT223 4000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: January, 2021 Rev. 0 NCV8415/DNCV8415 MAXIMUM RATINGS Rating Symbol Value Unit DraintoSource Voltage Internally Clamped V 42 V DSS DraintoGate Voltage Internally Clamped V 42 V DG GatetoSource Voltage V 14 V GS Drain Current Continuous I Internally Limited D Total Power Dissipation (SOT223) P W D T = 25C (Note 1) 1.29 A T = 25C (Note 2) 2.20 A Total Power Dissipation (DPAK) T = 25C (Note 1) 1.54 A T = 25C (Note 2) 2.99 A Thermal Resistance (SOT223) C/W JunctiontoAmbient (Note 1) R 96.4 JA 56.8 JunctiontoAmbient (Note 2) R JA 10.6 JunctiontoCase (Soldering Point) R JS Thermal Resistance (DPAK) JunctiontoAmbient (Note 1) R 80.8 JA JunctiontoAmbient (Note 2) R 41.8 JA JunctiontoCase (Soldering Point) R 3.2 JS Single Pulse Inductive Load Switching Energy (L = 10 mH, I = 4.2 A, V = 5 V, R = 25 , E 88 mJ Lpeak GS G AS T = 25C) Jstart Load Dump Voltage (V = 0 and 10 V, R = 10 ) (Note 3) U * 52 V GS L S Operating Junction Temperature T 40 to 150 C J Storage Temperature T 55 to 150 C storage Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Mounted onto a 80 80 1.6 mm single layer FR4 board (100 sq mm, 1 oz. Cu, steady state). 2. Mounted onto a 80 80 1.6 mm single layer FR4 board (645 sq mm, 1 oz. Cu, steady state). 3. Load Dump Test B (with centralized load dump suppression) according to ISO16750 2 standard. Guaranteed by design. Not tested in production. Passed Class C according to ISO16750 1. ESD ELECTRICAL CHARACTERISTICS (Note 4, 5) Parameter Test Condition Symbol Min Typ Max Unit ElectroStatic Discharge Capability Human Body Model (HBM) ESD 4000 V Charged Device Model (CDM) 1000 4. Not tested in production. 5. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AECQ100002 (JS0012017). Field Induced Charge Device Model ESD characterization is not performed on plastic molded packages with body sizes smaller than 2 2 mm due to the inability of a small package body to acquire and retain enough charge to meet the minimum CDM discharge current waveform characteristic defined in JEDEC JS 0022018. + I D DRAIN I G V DS GATE + SOURCE V GS Figure 2. Voltage and Current Convention www.onsemi.com 2