BAWH56W, NSVBAWH56W Dual Switching Diode, Common Anode Features 175C T Rated for High Temperature, Mission Critical J(MAX) wwwwww..onsemi.comonsemi.com Applications NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant SC70 CASE 419 STYLE 4 CATHODE MAXIMUM RATINGS (T = 25C) A 1 ANODE Rating Symbol Max Unit 3 Reverse Voltage V 70 V 2 R CATHODE Forward Current I 200 mA F NonRepetitive Peak Surge Current I 2.0 A FSM MARKING DIAGRAM (surge applied at rated load conditions, half wave, single pulse, 60 Hz) Stresses exceeding those listed in the Maximum Ratings table may damage CH M the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (T = 25C) 1 A Characteristic Symbol Max Unit CH = Device Code M = Date Code* Total Device Dissipation FR5 Board P 200 mW D (Note 1) = PbFree Package T = 25C A (Note: Microdot may be in either location) Derate above 25C 1.1 mW/C *Date Code orientation may vary depending Thermal Resistance, JunctiontoAmbient R 615 C/W JA upon manufacturing location. (Note 1) Total Device Dissipation P 300 mW D ORDERING INFORMATION Alumina Substrate (Note 2) T = 25C A Derate above 25C 1.6 mW/C Device Package Shipping Thermal Resistance, JunctiontoAmbient 417 C/W R JA SC70 3,000 / Tape & BAWH56WT1G (Note 2) (PbFree) Reel Junction and Storage Temperature T , T 55 to C J stg SC70 3,000 / Tape & NSVBAWH56WT1G +175 (PbFree) Reel 1. FR5 = 1.0 0.75 0.062 in. For information on tape and reel specifications, 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2018 Publication Order Number: 1 June, 2019 Rev. 4 BAWH56W/DBAWH56W, NSVBAWH56W ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V V (BR) (I = 100 A) 70 (BR) Reverse Voltage Leakage Current I A R (V = 25 V, T = 175C) 30 R J (V = 70 V) 2.5 R (V = 70 V, T = 175C) 50 R J Diode Capacitance C pF D (V = 0, f = 1.0 MHz) 2.0 R Forward Voltage V mV F (I = 1.0 mA) 715 F (I = 10 mA) 855 F (I = 50 mA) 1000 F (I = 150 mA) 1250 F Reverse Recovery Time t ns rr (I = I = 10 mA, R = 100 , I = 1.0 mA) (Figure 1) 6.0 F R L R(REC) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H 10% rr 0.1 F 90% DUT i = 1.0 mA R(REC) 50 INPUT 50 OUTPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2