NV25M01 EEPROM Serial 1-Mb SPI Description The NV25M01 is a EEPROM Serial 1Mb SPI device internally organized as 128Kx8 bits. It features a 256byte page write buffer and supports the Serial Peripheral Interface (SPI) protocol. The device www.onsemi.com features software and hardware write protection, including partial as well as full array protection. OnChip ECC (Error Correction Code) makes the device suitable for high reliability applications. Features SOIC8 TSSOP8 Automotive AECQ100 Grade 2 (40C to +105C) Qualified DW SUFFIX DT SUFFIX CASE 751BD CASE 948AL 10 MHz Capability 1.8 V to 5.5 V Supply Voltage Range SPI Modes (0,0) & (1,1) PIN CONFIGURATIONS 256byte Page Write Buffer CS 1 V CC Identification Page with Permanent Write Protection SO HOLD Selftimed Write Cycle SCK WP V Hardware and Software Protection SI SS Block Write Protection SOIC (DW), TSSOP (DT) Protect 1/4, 1/2 or Entire EEPROM Array (Top View) Low Power CMOS Technology 1,000,000 Program/Erase Cycles PIN FUNCTION 100 Year Data Retention 8 lead SOIC and TSSOP Packages Pin Name Function This Device is PbFree, Halogen Free/BFR Free and is RoHS CS Chip Select Compliant SO Serial Data Output V CC WP Write Protect V Ground SS SI SI Serial Data Input CS SCK Serial Clock NV25M01 SO WP HOLD Hold Transmission Input HOLD V Power Supply CC SCK ORDERING INFORMATION V SS See detailed ordering and shipping information in the package Figure 1. Functional Symbol dimensions section on page 10 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: April, 2019 Rev. 2 NV25M01/DNV25M01 MARKING DIAGRAMS TM1A W25M1A AYMXXX AYMXXX (TSSOP8) (SOIC8) TM1A = Specific Device Code W25M1A = Specific Device Code A = Assembly Location A = Assembly Location Y = Production Year (Last Digit) Y = Production Year (Last Digit) M = Production Month (19, O, N, D) M = Production Month (19, O, N, D) XXX = Last Three Digits of XXX = Last Three Digits of = Assembly Lot Number XXX = Assembly Lot Number = PbFree Microdot Table 1. MAXIMUM RATINGS Parameter Ratings Units Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C CC 4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte has to be written, 4 bytes (including the ECC bits) are reprogrammed. It is recommended to write by multiple of 4 bytes in order to benefit from the maximum number of write cycles. Table 3. D. C. OPERATING CHARACTERISTICS (V = 1.8 V to 5.5 V, T = 40C to +105C, unless otherwise specified) CC A Symbol Parameter Test Conditions Min Max Units I Supply Current SO open V = 1.8 V, f = 5 MHz 1.2 mA CCR CC SCK (Read Mode) V = 2.5 V, f = 10 MHz 1.8 mA CC SCK V = 5.5 V, f = 10 MHz 3 mA CC SCK I Supply Current 3 mA CCW (Write Mode) I Standby Current V = GND or V , CS = V 3 A SB IN CC CC I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage Current CS = V , V = GND or V 2 2 A LO CC OUT CC V Input Low Voltage V 2.5 V 0.5 0.3V V IL CC CC V < 2.5 V 0.5 0.25V CC CC V Input High Voltage V 2.5 V 0.7V V + 0.5 V IH CC CC CC V < 2.5 V 0.75V V + 0.5 CC CC CC V Output Low Voltage V 2.5 V, I = 3.0 mA 0.4 V OL CC OL V < 2.5 V, I = 150 A 0.2 CC OL V Output High Voltage V 2.5 V, I = 1.6 mA V 0.8 V OH CC OH CC V 0.2 V < 2.5 V, I = 100 A CC OH CC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2