X-On Electronics has gained recognition as a prominent supplier of NV93C46BMUW3VTBG EEPROM across the USA, India, Europe, Australia, and various other global locations. NV93C46BMUW3VTBG EEPROM are a product manufactured by ON Semiconductor. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

NV93C46BMUW3VTBG ON Semiconductor

NV93C46BMUW3VTBG electronic component of ON Semiconductor
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See Product Specifications
Part No.NV93C46BMUW3VTBG
Manufacturer: ON Semiconductor
Category: EEPROM
Description: EEPROM 1KB MICROWIRE SER EEPROM UDFN WETTABLE FLANKS
Datasheet: NV93C46BMUW3VTBG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.432 ea
Line Total: USD 1296 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 19 Sep to Mon. 23 Sep
MOQ : 3000
Multiples : 3000
3000 : USD 0.432

   
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We are delighted to provide the NV93C46BMUW3VTBG from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NV93C46BMUW3VTBG and other electronic components in the EEPROM category and beyond.

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NV93C46WF EEPROM Serial 1-Kb Microwire - Automotive Grade 1, Wettable Flank UDFN Package www.onsemi.com Description The NV93C46WF is an EEPROM Serial 1 Kb Microwire Automotive Grade 1 device which is configured as either 64 registers 1 UDFN8 of 16 bits (ORG pin at V ) or 128 registers of 8 bits (ORG pin at CC MU SUFFIX GND) in a Wettable Flank UDFN Package. Each register can be CASE 517DH written (or read) serially by using the DI (or DO) pin. The NV93C46WF features a selftimed internal write with autoclear. PIN CONFIGURATIONS Onchip Power On Reset circuit protects the internal logic against V CS 1 CC powering up in the wrong state. NC SK ORG DI Features GND DO Automotive AECQ100 Grade 1 (40C to +125C) Qualified (Top View) High Speed Operation: 2 MHz 2.5 V to 5.5 V Supply Voltage Range DEVICE MARKING Selectable x8 or x16 Memory Organization 1 SelfTimed Write Cycle with AutoClear XXXXX AWLYW Sequential Read Software Write Protection XXXXX = Specific Device Code Powerup Inadvertant Write Protection A = Assembly Location WL = Wafer Lot Low Power CMOS Technology Y = Year 1,000,000 Program/Erase Cycles W = Work Week = PbFree Package 100 Year Data Retention UDFN8 Wettable Flank Package This Device is PbFree, Halogen Free/BFR Free and RoHS PIN FUNCTION Compliant Pin Name Function CS Chip Select V CC SK Clock Input DI Serial Data Input ORG DO Serial Data Output CS DO NV93C46 V Power Supply CC SK GND Ground DI ORG Memory Organization NC No Connection GND Note: When the ORG pin is connected to V , the CC x16 organization is selected. When it is connected Figure 1. Functional Symbol to ground, the x8 organization is selected. If the ORG pin is left unconnected, then an internal pullup For additional information on our PbFree strategy and soldering details, please device will select the x16 organization. download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: April, 2019 Rev. 2 NV93C46WF/DNV93C46WF Table 1. ABSOLUTE MAXIMUM RATINGS Parameter Value Units Storage Temperature 65 to +150 C Voltage on Any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Block Mode, V = 5 V, 25C CC Table 3. D.C. OPERATING CHARACTERISTICS (V = +2.5 V to +5.5 V, T = 40C to +125C, unless otherwise specified.) CC A Symbol Parameter Test Conditions Min Max Units I Supply Current (Write) Write, V = 5.0 V 1 mA CC1 CC I Supply Current (Read) Read, DO open, f = 2 MHz, V = 5.0 V 500 A CC2 SK CC I Standby Current V = GND or V 5 A SB1 IN CC (x8 Mode) CS = GND, ORG = GND I Standby Current V = GND or V 3 A SB2 IN CC (x16 Mode) CS = GND, ORG = Float or V CC I Input Leakage Current V = GND to V 2 A LI IN CC I Output Leakage V = GND to V 2 A LO OUT CC Current CS = GND V Input Low Voltage 4.5 V V < 5.5 V 0.1 0.8 V IL1 CC V Input High Voltage 4.5 V V < 5.5 V 2 V + 1 V IH1 CC CC V Input Low Voltage 2.5 V V < 4.5 V 0 V x 0.2 V IL2 CC CC V Input High Voltage 2.5 V V < 4.5 V V x 0.7 V + 1 V IH2 CC CC CC V Output Low Voltage 4.5 V V < 5.5 V, I = 3 mA 0.4 V OL1 CC OL V Output High Voltage 2.4 V 4.5 V V < 5.5 V, I = 400 A OH1 CC OH V Output Low Voltage 2.5 V V < 4.5 V, I = 1 mA 0.2 V OL2 CC OL V Output High Voltage 2.5 V V < 4.5 V, I = 100 A V 0.2 V OH2 CC OH CC Table 4. PIN CAPACITANCE (T = 25C, f = 1 MHz, V = 5 V) A CC Symbol Test Conditions Min Typ Max Units C (Note 4) Output Capacitance (DO) V = 0 V 5 pF OUT OUT C (Note 4) Input Capacitance (CS, SK, DI, ORG) V = 0 V 5 pF IN IN 4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. www.onsemi.com 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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