NV93C86WF EEPROM Serial 16-Kb Microwire - Automotive Grade 1, Wettable Flank UDFN Package www.onsemi.com Description The NV93C86WF is an EEPROM Serial 16 Kb Microwire Automotive Grade 1 device, which is configured as either registers of 16 bits (ORG pin at V ) or 8 bits (ORG pin at GND) in a Wettable CC 1 Flank UDFN Package. Each register can be written (or read) serially UDFN8 by using the DI (or DO) pin. The NV93C86 is manufactured using MU SUFFIX ONSemiconductors advanced CMOS EEPROM floating gate CASE 517DH technology. The device is designed to endure 1,000,000 program/erase cycles and has a data retention of 100 years. The device is available in MARKING DIAGRAM 8pin UDFN package. 1 M3W Features AWLYW Automotive AECQ100 Grade 1 (40C to +125C) Qualified High Speed Operation: 2 MHz M3W = Specific Device Code A = Assembly Location Low Power CMOS Technology WL = Wafer Lot 2.5 V to 5.5 V Operation Y = Year W = Work Week Selectable x8 or x16 Memory Organization = PbFree Package Selftimed Write Cycle with Autoclear Hardware and Software Write Protection Powerup Inadvertent Write Protection PIN CONFIGURATION Sequential Read CS 1 V CC Program Enable (PE) Pin SK PE 1,000,000 Program/Erase Cycles DI ORG 100 Year Data Retention DO GND UDFN8 Wettable Flank Package UDFN8 These Devices are PbFree, Halogen Free/BFR Free, and RoHS Compliant PIN FUNCTION V CC Pin Name Function CS Chip Select ORG DI SK Clock Input CS NV93C86 DO DI Serial Data Input SK DO Serial Data Output PE V Power Supply CC GND Ground GND ORG Memory Organization Figure 1. Functional Symbol PE Program Enable Note: When the ORG pin is connected to V , the x16 organization CC is selected. When it is connected to ground, the x8 pin is selected. If ORDERING INFORMATION the ORG pin is left unconnected, then an internal pullup device will See detailed ordering and shipping information in the package select the x16 organization. dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: April, 2019 Rev. 2 NV93C86WF/DNV93C86WF Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Storage Temperature 65 to +150 C Voltage on Any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Block Mode, V = 5 V, 25C. CC Table 3. D.C. OPERATING CHARACTERISTICS (V = +2.5 V to +5.5 V, T =40C to +125C unless otherwise specified.) CC A Symbol Parameter Test Conditions Min Max Units I Supply Current (Write) Write, V = 5.0 V 2 mA CC1 CC I Supply Current (Read) Read, DO open, f = 2 MHz, V = 5.0 V 500 A CC2 SK CC I Standby Current V = GND or V 5 A SB1 IN CC (x8 Mode) CS = GND, ORG = GND I Standby Current V = GND or V 3 A SB2 IN CC (x16 Mode) CS = GND, ORG = Float or V CC I Input Leakage Current V = GND to V 2 A LI IN CC I Output Leakage V = GND to V 2 A LO OUT CC Current CS = GND V Input Low Voltage 4.5 V V < 5.5 V 0.1 0.8 V IL1 CC V Input High Voltage 4.5 V V < 5.5 V 2 V + 1 V IH1 CC CC V Input Low Voltage 2.5 V V < 4.5 V 0 V x 0.2 V IL2 CC CC V Input High Voltage 2.5 V V < 4.5 V V x 0.7 V + 1 V IH2 CC CC CC V Output Low Voltage 4.5 V V < 5.5 V, I = 2.1 mA 0.4 V OL1 CC OL V Output High Voltage 4.5 V V < 5.5 V, I = 400 A 2.4 V OH1 CC OH V Output Low Voltage 2.5 V V < 4.5 V, I = 1 mA 0.2 V OL2 CC OL V Output High Voltage 2.5 V V < 4.5 V, I = 100 A V 0.2 V OH2 CC OH CC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Table 4. PIN CAPACITANCE (Note 4) Symbol Test Conditions Min Typ Max Units C Output Capacitance (DO) V = 0 V 5 pF OUT OUT C Input Capacitance (CS, SK, DI, ORG) V = 0 V 5 pF IN IN www.onsemi.com 2