Diodes, Dual 40 Watt Peak Power, High Temperature SC70 Dual Common Anode Zeners MMBZHxxVAWT1G Series, SZMMBZHxxVAWT1G Series www.onsemi.com These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage ESD protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These SC70 devices are high temperature rated and ideal for use in high reliability CASE 419 applications where board space is at a premium. STYLE 4 Features SC70 Package Allows Either Two Separate Unidirectional CATHODE 1 3 ANODE Configurations or a Single Bidirectional Configuration CATHODE 2 Standard Zener Breakdown Voltage Range: 12 33 V Peak Power 40 W 1.0 ms (Unidirectional), per Figure 5 Waveform MARKING DIAGRAM ESD Rating: Class 3B (> 16 kV) per the Human Body Model Class C (> 400 V) per the Machine Model XX M Low Leakage < 5.0 A Flammability Rating UL 94 V0 1 175C T Rated for High Temperature, Mission Critical J(MAX) XX = Specific Device Code Applications M = Date Code = PbFree Package SZ Prefix for Automotive and Other Applications Requiring Unique (Note: Microdot may be in either location) Site and Control Change Requirements These are PbFree Devices* Mechanical Characteristics: ORDERING INFORMATION CASE: Void-free, transfer-molded, thermosetting plastic case Device Package Shipping FINISH: Corrosion resistant finish, easily solderable MMBZHxxVAWT1G SC70 3,000 / MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: (PbFree) Tape & Reel 260C for 10 Seconds SZMMBZHxxVAWT1G SC70 3,000 / Package designed for optimal automated board assembly (PbFree) Tape & Reel Small package size for high density applications For information on tape and reel specifications, Available in 8 mm Tape and Reel including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Use the Device Number to order the 7 inch/3,000 unit reel. Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: October, 2019 Rev. 2 MMBZH27VAW/DMMBZHxxVAWT1G Series, SZMMBZHxxVAWT1G Series MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation 1.0 ms (Note 1) P W pk T 25C 40 L Total Power Dissipation on FR5 Board (Note 2) P D T = 25C 225 mW A Derate above 25C 1.5 mW/C Thermal Resistance, JunctiontoAmbient (Note 2) R 605 C/W JA Junction and Storage Temperature Range T , T 55 to +175 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 5 and derate above T = 25C per Figure 6. A 2. FR5 = 1.0 x 0.75 x 0.62 in. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol Parameter I I Maximum Reverse Peak Pulse Current PP I V Clamping Voltage I F C PP V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T V V V C BR RWM V I Test Current I T V R F I T V Maximum Temperature Coefficient of V BR BR I Forward Current F V Forward Voltage I F F I PP Z Maximum Zener Impedance I ZT ZT I Reverse Current ZK UniDirectional Zener Z Maximum Zener Impedance I ZK ZK ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (V = 0.9 V Max I = 10 mA) F F Breakdown Voltage V I (Note 4) C PP I R V V (Note 3) (V) I V I V V RWM BR T C PP RWM BR Device Volts nA Min Nom Max mA V A mV/ C Marking Device* MMBZH12VAWT1G CK 8.5 200 11.40 12 12.60 1.0 17 2.35 7.5 MMBZH15VAWT1G AJ 12 50 14.25 15 15.75 1.0 21 1.9 12.3 MMBZH20VAWT1G** 17 50 19.00 20 21.00 1.0 28 1.4 17.2 MMBZH27VAWT1G** 22 50 25.65 27 28.35 1.0 40 1.0 24.3 MMBZH33VAWT1G** 26 50 31.35 33 34.65 1.0 46 0.87 30.4 3. V measured at pulse test current I at an ambient temperature of 25C. BR T 4. Surge current waveform per Figure 5 and derate per Figure 6. *Includes SZ prefix devices where applicable. **AECQ release available upon request. www.onsemi.com 2