AXUVPS7 Opto Diode

From Deep UV to Mid-IR 2 Quad Electron Detector 146 mm AXUVPS7 An ITW Company FEATURES Ideal for Electron Detection Circular Active Area Electro-Optical Characteristics at 25C (Per Element) Parameters Test Conditions Min Typ Max Units 2 Active Area (per element) 36.5 mm Responsivity (see graphs on next page) 0.07 0.08 0.09 A/W Shunt Resistance, RsH V = 10 mV 10 MOhm R Reverse Breakdown Voltage, V I = 1 A 5 Volts R R Capacitance, C V = 0 V 2 6 nF R Rise Time V = 2 V, R = 50 2 usec R L Thermal Parameters Units Storage and Operating Temperature Range 1 Ambient -10C to 40C Nitrogen or Vacuum -20C to 80C 2 Lead Soldering Temperature 260C 1 Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 150 nm will be compromised. 2 0.080 from case for 10 seconds. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode, Handling Precautions for IRD Detectors, prior to removing cover. Revision November 26, 2019 Page 1 of 4 From Deep UV to Mid-IR 2 Quad Electron Detector 146 mm AXUVPS7 An ITW Company Typical Electron Response 0.30 0.25 0.20 0.15 0.10 0.05 0.00 100 1000 10,000 100,000 ENERGY (ev) Typical EUV-UV Photon Response 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 50 100 150 200 250 WAVELENGTH (nm) Typical UV-VIS-NIR Photon Responsivity 0.5 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) Revision November 26, 2019 Page 2 of 4 RESPONSIVITY (A/W) RESPONSIVITY (A/W) RESPONSIVITY (A/W)