X-On Electronics has gained recognition as a prominent supplier of OSI5XNE3E1E Infrared Emitters - High Power across the USA, India, Europe, Australia, and various other global locations. OSI5XNE3E1E Infrared Emitters - High Power are a product manufactured by Optosupply. We provide cost-effective solutions for Infrared Emitters - High Power, ensuring timely deliveries around the world.

OSI5XNE3E1E Optosupply

OSI5XNE3E1E electronic component of Optosupply
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Part No.OSI5XNE3E1E
Manufacturer: Optosupply
Category: Infrared Emitters - High Power
Description: IR transmitter; 940nm; P opt:68mW; 140°; P:2W
Datasheet: OSI5XNE3E1E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.98 ea
Line Total: USD 7.98 
Availability - 1
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 7.98
4 : USD 4.802
10 : USD 4.536

   
Manufacturer
Product Category
Wavelength
Type Of Diode
Viewing Angle
Optical Power
Power
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the OSI5XNE3E1E from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the OSI5XNE3E1E and other electronic components in the Infrared Emitters - High Power category and beyond.

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Xeon 3 Power 940nm Infrared Emitter LED Xeon 3 Power 940nm Emitter LED OSI5XNE3E1E VER C.0 Features Outline Dimension Highest luminous flux Super energy efficiency Very long operating life Superior ESD protection Applications Night Vision Camera Anode Cathode Outdoor./Indoor applications Unit:mm Tolerance:0.30mm Absolute Maximum Rating (Ta=25)))) Directivity Item Symbol Value Unit 0 DC Forward Current I 1,000 mA F Pulse Forward Current* I 7,000 mA FP Reverse Voltage V 5 V R Power Dissipation P 2,000 mW 0 D Operating Temperature Topr -30 ~ +85 Storage Temperature Tstg -40~ +100 Lead Soldering Temperature Tsol 260/5sec - *Pulse width Max.10ms Duty ratio max 1/10 Electrical -Optical Characteristics (Ta=25)) Forward Operating Current (DC) )) Item Symbol Condition Min. Typ. Max. Unit 1200 1000 DC Forward Voltage V I =700mA 1.2 1.5 2.0 V R th(J-a)=20 / W F F 800 DC Reverse Current I V =5V - - 10 A 600 R R 400 Peak Wavelength I =700mA - 940 - nm P F 200 0 Radiant Intensity Ie I =700mA 50 68 - mW/Sr F 0 20 40 60 80 100 Ambient Temperature, TA () 50% Power Angle 21/2 I =700mA - 140 - deg F Note: Advises please attach heat sink to use if Power Dissipation is more than 0.5W. LED & Application Technologies Forward Current, IF (mA)Xeon 3 Power 940nm Infrared Emitter LED Xeon 3 Power 940nm Emitter LED OSI5XNE3E1E VER C.0 Soldering Heat Reliability : Reflow soldering Profile Reflow soldering should not be done more than two times. When soldering, do not put stress on the LEDs during heating. After soldering, do not warp the circuit board. Repairing should not be done after the LEDs have been soldered. When repairing is unavoidable, a double-head soldering iron should be used. It should be confirmed beforehand whether the characteristics of the LEDs will or will not be damaged by repairing. Solder Average ramp-up rate = 3C/sec. max. Preheat temperature: 150~180C Preheat time = 120 sec. max. Ramp-down rate = 6C/sec. max. Peak temperature = 220C max. Time within 3C of actual peak temperature = 25 sec. max. Duration above 200C is 40 sec. max. LED & Application Technologies

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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