X-On Electronics has gained recognition as a prominent supplier of SFH 3600-2/3-Z Phototransistors across the USA, India, Europe, Australia, and various other global locations. SFH 3600-2/3-Z Phototransistors are a product manufactured by OSRAM. We provide cost-effective solutions for Phototransistors, ensuring timely deliveries around the world.

SFH 3600-2/3-Z OSRAM

SFH 3600-2/3-Z electronic component of OSRAM
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Part No.SFH 3600-2/3-Z
Manufacturer: OSRAM
Category: Phototransistors
Description: Phototransistors PHOTOTRANSISTOR
Datasheet: SFH 3600-2/3-Z Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0

Multiples : 6000
N/A

Obsolete
0
MOQ : 2000
Multiples : 2000
2000 : USD 0.3712
4000 : USD 0.3466
12000 : USD 0.3433
30000 : USD 0.3433
54000 : USD 0.3321
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Maximum On-State Collector Current
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Collector- Emitter Voltage VCEO Max
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Pd - Power Dissipation
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We are delighted to provide the SFH 3600-2/3-Z from our Phototransistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SFH 3600-2/3-Z and other electronic components in the Phototransistors category and beyond.

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2014-02-19 Silicon NPN Phototransistor in MIDLED package NPN-Silizium-Fototransistor im MIDLED-Gehuse Version 1.1 SFH 3600 Features: Besondere Merkmale: Spectral range of sensitivity: (typ) 500 ... 1100 Spektraler Bereich der Fotoempfindlichkeit: nm (typ) 500 ... 1100 nm Package: MIDLED, Silicone, colourless, clear Gehuse: MIDLED, Silikon, farblos, klar Narrow angle ( 20) Enger Empfangswinkel ( 20) Low profile component (1,6 mm) Geringe Bauhhe (1,6 mm) Emitter in same package (SFH 46xx) available Emitter im gleichen Gehuse (SFH 46x) verfgbar Taping as Toplooker Taping as Toplooker Applications Anwendungen Interrupters, light curtains Lichtschranken, Lichtvorhnge Sensors (consumer and industrial applications) Sensorik (Consumer, Industrieelektronik) Automotive applications Automobilanwendungen Proximity sensor Nherungssensor Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer 2 = 950 nm, E = 0.1 mW/cm , V = 5 V e CE I A PCE SFH 3600 100 ... 500 Q65110A1573 SFH 3600-2/3 100 ... 320 Q65110A2665 SFH 3600-3/4 160 ... 500 Q65110A2666 Note: Only one bin within one packing unit (variation less than 2:1) Anm.: Nur eine Gruppe pro Verpackungseinheit (Streuung kleiner 2:1) 2014-02-19 1Version 1.1 SFH 3600 Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Collector-emitter voltage V 35 V CE Kollektor-Emitter-Spannung Collector current I 15 mA C Kollektorstrom Collector surge current I 75 mA CS Kollektorspitzenstrom ( < 10 s) Emitter-collector voltage V 7V EC Emitter-Kollektor-Spannung Total power dissipation P 130 mW tot Verlustleistung 1) page 12 Thermal resistance junction - ambient R 340 K/W thJA Wrmewiderstand Sperrschicht - Umgebung 1) Seite 12 2) page 12 Thermal restistance junction R 180 K/W thJS 2) Seite 12 Wrmewiderstand Sperrschicht/Ltstelle Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Wavelength of max. sensitivity (typ) 990 nm S max Wellenlnge der max. Fotoempfindlichkeit Spectral range of sensitivity (typ) (typ) 500 nm 10% Spektraler Bereich der Fotoempfindlichkeit ... 1100 2 Radiant sensitive area (typ) A 0.04 mm Bestrahlungsempfindliche Flche Dimensions of chip area (typ) L x W (typ) 0.35 mm x Abmessung der Chipflche x 0.35 mm 2014-02-19 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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