SFH4240 Osram

2016-02-11 High Power Infrared Emitter (940 nm) Version 1.4 SFH 4240 Features: High Power Infrared LED Short switching times High forward current allowed at high temperature The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications Infrared Illumination for cameras IR data transmission Sensor technology Notes Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Ordering Information Type: Radiant Intensity Ordering Code I mW/sr e I = 100 mA, t = 20 ms F p SFH 4240 18 ( 10) Q65110A7513 Note: Measured at a solid angle of = 0.01 sr 2016-02-11 1Version 1.4 SFH 4240 Maximum Ratings (T = 25 C) A Parameter Symbol Values Unit Operation and storage temperature range T T -40 ... 100 C op stg Reverse voltage V 5 V R Forward current I 100 mA F Surge current I 1 A FSM (t = 100 s, D = 0) p Power consumption P 180 mW tot ESD withstand voltage V 2 kV ESD (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) 1) page 12 Thermal resistance junction - ambient R 300 K / W thJA Thermal resistance junction - soldering point R 140 K / W thJS 2) page 12 Characteristics (T = 25 C) A Parameter Symbol Values Unit Peak wavelength (typ) 950 nm peak (I = 100 mA, t = 20 ms) F p Centroid wavelength (typ) 940 nm centroid (I = 100 mA, t = 20 ms) F p Spectral bandwidth at 50% of I (typ) 42 nm max (I = 100 mA, t = 20 ms) F p Half angle (typ) 60 Dimensions of active chip area (typ) L x W 0.3 x 0.3 mm x mm Rise and fall time of I ( 10% and 90% of I ) (typ) t , t 12 ns e e max r f (I = 100 mA, R = 50 ) F L Forward voltage (typ (max)) V 1.5 ( 1.8) V F (I = 100 mA, t = 20 ms) F p Forward voltage (typ (max)) V 2.3 ( 3) V F (I = 1 A, t = 100 s) F p Reverse current I not designed for A R (V = 5 V) reverse operation R Total radiant flux (typ) 55 mW e (I =100 mA, t =20 ms) F p 2016-02-11 2