SFH 4451-V Osram

2016-09-23 Narrow beam LED in Mini MIDLED package (850 nm) Version 1.4 SFH 4451 Features: Highly Efficient Infrared LED Short switching times Narrow halfangle (+-17) Low profile component Applications Sensor technology For control and drive circuits Proximity sensor Mobile devices Notes Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Ordering Information Type: Radiant Intensity Ordering Code I [mW/sr] e I = 100 mA, t = 20 ms F p SFH 4451 70 ( 25) Q65111A2583 SFH 4451-UV 40 ... 125 Q65111A4223 SFH 4451-V 63 ... 125 Q65111A6962 Note: Measured at a solid angle of = 0.01 sr 2016-09-23 1Version 1.4 SFH 4451 Maximum Ratings (T = 25 C) A Parameter Symbol Values Unit Operation and storage temperature range T ; T -40 ... 85 C op stg Reverse voltage V 5 V R Forward current I 100 mA F Surge current I 1 A FSM (t = 300 s, D = 0) p Power consumption P 180 mW tot ESD withstand voltage V 2 kV ESD (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) 1) page 12 Thermal resistance junction - ambient R 400 K / W thJA Thermal resistance junction - soldering point R 200 K / W thJS 2) page 12 Characteristics (T = 25 C) A Parameter Symbol Values Unit Peak wavelength (typ) 860 nm peak (I = 100 mA, t = 20 ms) F p Centroid wavelength (typ) 850 nm centroid (I = 100 mA, t = 20 ms) F p Spectral bandwidth at 50% of I (typ) 30 nm max (I = 100 mA, t = 20 ms) F p Half angle (typ) 17 Dimensions of active chip area (typ) L x W 0.3 x 0.3 mm x mm Rise and fall time of I ( 10% and 90% of I ) (typ) t , t 12 ns e e max r f (I = 100 mA, R = 50 ) F L Forward voltage (typ (max)) V 1.5 ( 1.8) V F (I = 100 mA, t = 20 ms) F p Forward voltage (typ (max)) V 2.4 ( 3) V F (I = 1 A, t = 100 s) F p Reverse current I not designed for A R (V = 5 V) reverse operation R Total radiant flux (typ) 55 mW e (I =100 mA, t =20 ms) F p 2016-09-23 2