2016-09-23
Narrow beam LED in Mini MIDLED package (850 nm)
Version 1.4
SFH 4451
Features:
Highly Efficient Infrared LED
Short switching times
Narrow halfangle (+-17)
Low profile component
Applications
Sensor technology
For control and drive circuits
Proximity sensor
Mobile devices
Notes
Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which
can be hazardous to the human eye. Products which incorporate these devices have to follow the safety
precautions given in IEC 60825-1 and IEC 62471.
Ordering Information
Type: Radiant Intensity Ordering Code
I [mW/sr]
e
I = 100 mA, t = 20 ms
F p
SFH 4451 70 ( 25) Q65111A2583
SFH 4451-UV 40 ... 125 Q65111A4223
SFH 4451-V 63 ... 125 Q65111A6962
Note: Measured at a solid angle of = 0.01 sr
2016-09-23 1Version 1.4 SFH 4451
Maximum Ratings (T = 25 C)
A
Parameter Symbol Values Unit
Operation and storage temperature range T ; T -40 ... 85 C
op stg
Reverse voltage V 5 V
R
Forward current I 100 mA
F
Surge current I 1 A
FSM
(t = 300 s, D = 0)
p
Power consumption P 180 mW
tot
ESD withstand voltage V 2 kV
ESD
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
1) page 12
Thermal resistance junction - ambient R 400 K / W
thJA
Thermal resistance junction - soldering point R 200 K / W
thJS
2) page 12
Characteristics (T = 25 C)
A
Parameter Symbol Values Unit
Peak wavelength (typ) 860 nm
peak
(I = 100 mA, t = 20 ms)
F p
Centroid wavelength (typ) 850 nm
centroid
(I = 100 mA, t = 20 ms)
F p
Spectral bandwidth at 50% of I (typ) 30 nm
max
(I = 100 mA, t = 20 ms)
F p
Half angle (typ) 17
Dimensions of active chip area (typ) L x W 0.3 x 0.3 mm x
mm
Rise and fall time of I ( 10% and 90% of I ) (typ) t , t 12 ns
e e max r f
(I = 100 mA, R = 50 )
F L
Forward voltage (typ (max)) V 1.5 ( 1.8) V
F
(I = 100 mA, t = 20 ms)
F p
Forward voltage (typ (max)) V 2.4 ( 3) V
F
(I = 1 A, t = 100 s)
F p
Reverse current I not designed for A
R
(V = 5 V) reverse operation
R
Total radiant flux (typ) 55 mW
e
(I =100 mA, t =20 ms)
F p
2016-09-23 2