X-On Electronics has gained recognition as a prominent supplier of 2SA201000L Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA201000L Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA201000L Panasonic

2SA201000L electronic component of Panasonic
2SA201000L Panasonic
2SA201000L Bipolar Transistors - BJT
2SA201000L  Semiconductors

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See Product Specifications
Part No. 2SA201000L
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS PNP 15V 2.5A MINI 3P
Datasheet: 2SA201000L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.1631
N/A

0
MOQ : 1
Multiples : 1
1 : USD 0.2281
10 : USD 0.1962
100 : USD 0.1669
500 : USD 0.1563
N/A

   
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Product Category
RoHS - XON
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We are delighted to provide the 2SA201000L from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA201000L and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA2010 Silicon PNP epitaxial planar type For DC-DC converter Unit: mm +0.10 For various driver circuits 0.40 0.05 +0.10 0.16 0.06 3 Features Low collector-emitter saturation voltage V CE(sat) High-speed switching 1 2 Mini type package, allowing downsizing and thinning of the (0.95) (0.95) equipment and automatic insertion through the tape packing . 1.90.1 +0.20 2.90 0.05 Absolute Maximum Ratings T = 25C a 10 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 15 V CBO Collector-emitter voltage (Base open) V 15 V CEO 1: Base Emitter-base voltage (Collector open) V 5V 2: Emitter EBO 3: Collector Collector current I 2.5 A C Mini3-G1 Package Peak collector current I 10 A CP Marking Symbol: AS * Collector power dissipation P 600 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Note) : Measure on the ceramic substrate at 15 mm 15 mm 0.6 mm * Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 15 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 15 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 5V EBO E C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 0.1 A CBO CB E * Forward current transfer ratio h V = 2 V, I = 100 mA 200 560 FE1 CE C h V = 2 V, I = 2.5 A 100 FE2 CE C * Collector-emitter saturation voltage V I = 1 A, I = 10 mA 140 mV CE(sat) C B I = 2.5 A, I = 50 mA 270 320 C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 180 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 40 pF ob CB E (Common base, input open circuited) Turn-on time t Refer to the measurement circuit 35 ns on Turn-off time t 10 ns off Storage time t 110 ns stg Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Pulse measurement * Publication date: September 2007 SJC00040DED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SA2010 Measurement Circuit P T C a 700 I 600 B2 Output I B1 Input 500 R B R L 400 300 470 F PW = 20 s 200 DC 1% V = 5 V CC 100 20I = 20I = I = 1.5 A B1 B2 C 0 0120 40 60 80 100 120 14060 Ambient temperature T (C) a I V I V V I C CE C BE CE(sat) C 2.5 5.0 1 I / I = 100 T = 25C V = 2 V C B a CE 4.5 I = 10 mA B 2.0 4.0 9 mA 8 mA 3.5 7 mA T = 85C a 1.5 3.0 T = 85C a 25C 6 mA 25C 2.5 0.1 5 mA 1.0 2.0 4 mA 25C 1.5 3 mA 2 mA 25C 0.5 1.0 0.5 0 0 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1 2 3 4 5 6 7 0.01 0.1 1 10 Collector-emitter voltage V (V) ( ) ( ) Base-emitter voltage V V Collector current I A CE BE C h I f I C V FE C T E ob CB 600 250 100 V = 10 V CB f = 1 MHz f = 1 MHz T = 25C a T = 25C a T = 25C a 500 80 200 T = 85C a 400 150 60 25C 300 100 25C 40 200 20 50 100 0 0 0 0.001 0.01 0.1 1 10 110 100 1 10 100 Collector current I (A) ( ) Emitter current I mA Collector-base voltage V (V) C E CB 2 SJC00040DED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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