AQV214EA Panasonic

VDE TESTING VDE GU-E PhotoMOS (AQV414E, AQV41EH) (AQV412EH) (Standard type) (AQV410EH, 414EH) (AQV410EH, 414EH) (Reinforced type) General use and GU-E PhotoMOS economy type. DIP (1 Form B) 6-pin type. (AQV414E, Reinforced insulation AQV41EH) 5,000V type. 2. This is the low-cost version 5. High sensitivity, low ON resistance PhotoMOS 1 Form B output type relay. Can control a maximum 0.13 A load 6.4 8.8 .252 Compared to the previous GU .346 current with a 5 mA input current. Low 3.9 PhotoMOS 1 Form B type relay, the ON resistance of 18 (AQV410EH)154 attainment of an economical price that is Stable operation because there are no 6.4 8.8 approximately 22% lower will further metallic contact parts252 .346 broaden its market. 3.6 6. Low-level off-state leakage current .142 The SSR has an off-state leakage current 3. Normally closed type (2 Form B) is of several milliamperes, whereas the low on-resistance. PhotoMOS relay has typ. 100 pA even (All AQ4 PhotoMOS are Form B mm inch with the rated load voltage of 400 V types. And also the Form A types have (AQV414E). a low on-resistance.) 1 6 7. Reinforced insulation 5,000 V type This has been realized thanks to the also available. built-in MOSFET processed by our 2 5 More than 0.4 mm internal insulation proprietary method, DSD (Double- 3 4 distance between inputs and outputs. diffused and Selective Doping) method. Conforms to EN41003, EN60950 Cross section of the normally-closed type of (reinforced insulation). power MOS Passivation membrane Intermediate Source electrode Gate electrode insulating membrane TYPICAL APPLICATIONS Gate oxidation FEATURES + + + + N N N N P+ P+ Power supply membrane 1. 60V type couples high capacity Measuring equipment N (0.55A) with low on-resistance (1 ). Security equipment Drain electrode + Telephone equipment N GU-E Item (1 Form B type) type Sensors Part No. AQV410EH AQV412EH 4. Controls low-level analog signals Load voltage 350V 60V PhotoMOS relays feature extremely low Continuous 0.13A 0.55A closed-circuit offset voltage to enable load current control of low-level analog signals without ON resistance 18 1 (typ.) distortion. TYPES Part No. Output rating* Packing quantity Through hole Surface-mount terminal terminal I/O isolation Type voltage Tape and reel packing style Load Load Tube packing style Tube Tape and reel Picked from the Picked from the voltage current 1/2/3-pin side 4/5/6-pin side 1,500 V AC 400 V 120 mA AQV414E AQV414EA AQV414EAX AQV414EAZ 1 tube contains (Standard) AC/DC 50 pcs. 60 V 550 mA AQV412EH AQV412EHA AQV412EHAX AQV412EHAZ 1,000 pcs. type 1 batch contains 5,000 V AC 350 V 130 mA AQV410EH AQV410EHA AQV410EHAX AQV410EHAZ 500 pcs. (Reinforced) 400 V 120 mA AQV414EH AQV414EHA AQV414EHAX AQV414EHAZ *Indicate the peak AC and DC values. Note: For space reasons, the SMD terminal shape indicator A and the package type indicator X and Z are omitted from the seal. All Rights Reserved COPYRIGHT Matsushita Electric Works, Ltd. NEW GU-E PhotoMOS (AQV414E, AQV41EH) RATING 1. Absolute maximum ratings (Ambient temperature: 25C 77F) Type of Item Symbol AQV414E(A) AQV412EH(A) AQV410EH(A) AQV414EH(A) Remarks connection LED forward current IF 50 mA LED reverse voltage VR 5 V Input Peak forwrd current IFP 1 A f = 100 Hz, Duty factor = 0.1% Power dissipation Pin 75 mW Load voltage (peak AC) VL 400 V 60 V 350 V 400 V A 0.12 A 0.55 A 0.13 A 0.12 A A connection: Peak AC, DC Continuous load current IL B 0.13 A 0.65 A 0.15 A 0.13 A B,C connection: DC Output C 0.15 A 0.8 A 0.17 A 0.15 A A connection: 100 ms (1 shot), Peak load current Ipeak 0.3 A 1.5 A 0.4 A 0.3 A VL = DC Power dissipation Pout 500 mW Total power dissipation PT 550 mW I/O isolation voltage Viso 1,500 V AC 5,000 V AC Non-condensing at low Operating Topr 40C to +85C 40F to +185F Temperature temperatures limits Storage Tstg 40C to +100C 40F to +212F 2. Electrical characteristics (Ambient temperature: 25C 77F) Type of Item Symbol connec- AQV414E(A) AQV412EH(A) AQV410EH(A) AQV414EH(A) Condition tion Typical 1.45 mA 1.9 mA 1.9 mA 1.9 mA LED operate (OFF) IFoff IL= Max. current Maximum 3.0 mA Minimum 0.3 mA 0.4 mA 0.4 mA 0.4 mA LED reverse (ON) Input IFon IL= Max. current Typical 1.40 mA 1.8 mA 1.8 mA 1.8 mA Typical 1.25 V (1.14 V at IF= 5 mA) LED dropout voltage VF IF= 50 mA Maximum 1.5 V Typical 26 1 18 25.2 IF = 0 mA Ron A IL= Max. Maximum 50 2.5 35 50 Within 1 s on time Typical 20 0.55 13 19 IF= 0 mA On resistance Ron B IL= Max. Maximum 25 1.3 17.5 25 Within 1 s on time Output IF= 0 mA Typical 10 0.3 6.5 10 Ron C IL= Max. Maximum 12.5 0.7 8.8 12.5 Within 1 s on time Off state leakage IF= 5 mA Maximum ILeak 1 A 10 A 10 A 10 A current VL = Max. Typical 0.7 ms 3 ms 1.5 ms 1.3 ms Operate IF = 0 mA 5 mA Toff (OFF) time* IL = Max. Maximum 2.0 ms 10 ms 3.0 ms 3.0 ms Switching speed Typical 0.1 ms 0.3 ms 0.3 ms 0.3 ms Reverse IF= 5 mA 0 mA Ton (ON) time* IL = Max. Transfer Maximum 1.0 ms 1.5 ms 1.5 ms 1.5 ms characteristics Typical 0.8 pF f = 1 MHz I/O capacitance Ciso VB = 0 V Maximum 1.5 pF Initial I/O isolation Minimum Riso 1,000 M 500 V DC resistance Note: Recommendable LED forward current Standard type IF = 5 mA Reinforced type IF = 5 to 10 mA *Operate/Reverse time Input Output 10% 90% Toff Ton All Rights Reserved COPYRIGHT Matsushita Electric Works, Ltd.