Product Information

LNJ237W82RA

Name: LNJ237W82RA
Brand: Panasonic
SKU: LNJ237W82RA_Panasonic
Availability: OutOfStock
Rating: 5 (11 reviews)

LNJ237W82RA electronic component of Panasonic

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Standard LEDs - SMD LED RED HI-BRT ESS

Manufacturer: Panasonic

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 - WHS 1 MOQ : 5000 Multiples : 5000 LNJ237W82RA Panasonic	5000 : USD 0.0962	N/A Obsolete

0 - WHS 2 MOQ : 1 Multiples : 1 LNJ237W82RA Panasonic	1 : USD 0.6715	N/A Obsolete

0 - WHS 3 MOQ : 5 Multiples : 1 LNJ237W82RA Panasonic	5 : USD 0.537 25 : USD 0.3604 100 : USD 0.2629 250 : USD 0.2067 500 : USD 0.1802 1000 : USD 0.1615	N/A Obsolete

0 - WHS 4 MOQ : 5000 Multiples : 5000 LNJ237W82RA Panasonic	5000 : USD 0.0879 15000 : USD 0.0848	N/A Obsolete

0 - WHS 5 MOQ : 10000 Multiples : 10000 LNJ237W82RA Panasonic	10000 : USD 0.0701	N/A Obsolete

0 - WHS 6 MOQ : 10000 Multiples : 10000 LNJ237W82RA Panasonic	10000 : USD 0.0764	N/A Obsolete

0 - WHS 7 MOQ : 1 Multiples : 1 LNJ237W82RA Panasonic	1 : USD 0.5471 10 : USD 0.2997 100 : USD 0.1592 500 : USD 0.1293 1000 : USD 0.0995 5000 : USD 0.0759	N/A Obsolete

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Additional Infomation About Product

LNJ237W82RA Hight Bright Surface Mounting Chip LED ESS II Type Absolute Maximum Ratings T = 25C a Lighting Color Parameter Symbol Rating Unit Red Power dissipation P 55 mW D Forward current I 20 mA F * Pulse forward current I 60 mA FP Reverse voltage V 4 V R Operating ambient temperature T 30 to +85 C opr Storage temperature T 40 to +100 C stg Note) : The condition of I is duty 10%, Pulse width 1 msec. * FP Electro-Optical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit 1 * Luminous intensity I I = 5 mA 5.8 16.0 26.8 mcd O F Reverse current I V = 4 V 100 A R R Forward voltage V I = 5 mA 1.95 2.30 V F F Peak emission wavelength I = 5 mA 645 nm P F 2 * Dominant emission wavelength I = 5 mA 620 630 640 nm d F Spectral half band width I = 5 mA 20 nm F Note) 1: Measurement tolerance: 20% * 2: Measurement tolerance: 2 nm * I I I V Relative luminous intensity T O F F F a 3 4 2 10 10 10 3 10 2 10 10 2 10 10 1 1 2 11010 1.5 1.7 1.9 2.1 2.3 2.5 0 30 60 90 30 Forward current I (mA) Forward voltage V (V) Ambient temperature T (C) F F a Relative luminous intensity I T P F a 40 100 Y Directive characteristics 30 80 X 0 10 10 20 20 30 30 X 60 Y 40 40 80 20 50 50 60 40 60 60 40 10 70 70 20 20 80 80 90 90 0 0 550 600 650 700 100 80 60 40 20 0 20 40 60 80 100 30 0306090 Relative luminous intensity (%) Ambient temperature T (C) Peak emission wavelength (nm) a P Publication date: November 2016 Ver. CEK 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Relative luminous intensity (%) Luminous intensity I (mcd) O Forward current I (mA) F Forward current I (mA) Relative luminous intensity (%) FLNJ237W82RA Package (Unit: mm) 1.10 0.10 Anode mark 2 1 Luminescence position (0.19) 0.56 0.10 0.56 0.10 Polarity 1 2 1 2 1.60 0.10 1. Anode 2. Cathode Recommended Land Layout 1.65 0.80 (Note1)Electrode projection is not included in the package dimensions. (Note2)About solder thickness, please examine the products yourself completely. (Recommended thickness : t=0.10 mm 0.15 mm) Ver. CEK 2 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) 0.20 0.05 0.80 0.80 0.10 (0.09 0.035) 0.80 0.10

HS Compliance

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:

Panasonic may also be referenced as

Aromat
PA4
PAB
PAN
Panasonic - BSG
Panasonic - ECG
Panasonic - SSG
PANASONIC / SUNX
PANASONIC ACCESSORIES
PANASONIC BATTERIES
PANASONIC BATTERY
Panasonic Electric W
Panasonic Electric Works
Panasonic Electronic Components
Panasonic Electronic Components - Semiconductor Products
PANASONIC EW / AROMAT
PANASONIC EW/AROMAT
PANASONIC IMD
PANASONIC IND DEVICES (PIDSA)
Panasonic Industrial Automation Sales
Panasonic Industrial Devices
PANASONIC PIDSMY
Panasonic Semiconductors
PB4

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