LNJ8L4C28RAA Panasonic

LNJ8L4C28RAA Hight Bright Surface Mounting Chip LED 3528 (PLCC4) Type Absolute Maximum Ratings T = 25C a Lighting Color Parameter Symbol Rating Unit Red Power dissipation P 190 mW D Forward current I 70 mA F * Pulse forward current I 100 mA FP Reverse voltage V 5 V R Junction temperature T 125 C j Thermal resistance R 130 C/W th Operating ambient temperature T 40 to +105 C opr Storage temperature T 40 to +125 C stg Note) : The condition of I is duty 10%, Pulse width 1 msec. * FP Electro-Optical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit 1 * Luminous intensity I I = 50 mA 1 450 1 810 2 260 mcd O F Reverse current I V = 5 V 10 A R R 2 * Forward voltage V I = 50 mA 2.05 2.30 2.65 V F F 1 * Luminous ux F I = 50 mA (5.40) (6.72) (8.40) lm F Peak emission wavelength I = 50 mA 623 nm F P 3 * Dominant emission wavelength I = 50 mA 612 617 624 nm d F Spectral half band width I = 50 mA 20 nm F Note) 1: Measurement tolerance: 11% * 2: Measurement tolerance: 0.15 V * 3: Measurement tolerance: 2 nm * Relative luminous intensity T I I I V a O F F F 3 4 2 10 10 10 3 10 2 10 10 2 10 10 1 10 2 11010 1.0 1.5 2.0 2.5 3.0 4.0 40 20 0 20 40 60 80 100 Forward current I (mA) Forward voltage V (V) Ambient temperature T (C) F F a Relative luminous intensity I T P F a 80 100 Directive characteristics 60 80 0 10 10 20 20 30 30 60 40 80 40 40 50 50 60 40 60 60 40 20 70 70 20 20 80 80 90 90 0 0 550 600 650 700 100 80 60 40 20 0 20 40 60 80 100 0 20 40 60 80 100 120 Peak emission wavelength (nm) Relative luminous intensity (%) Ambient temperature T (C) P a Publication date: November 2016 Ver. BEK 1 Relative luminous intensity (%) Luminous intensity I (mcd) O Forward current I (mA) F Forward current I (mA) Relative luminous intensity (%) FLNJ8L4C28RAA Package (Unit: mm) Ver. BEK 2