BAS116TW/BAV199S SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES 100 Volt 200mWatt VOLTAGE POWER FEATURES Suface mount package ideally suited for automatic insertion. Very low leakage current. 2nA typical at VR=75V. Low capacitance. 2pF max at VR=0V, f=1MHz Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) MECHANICAL DATA Case: SOT-363 plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx weight: 0.0002 ounces, 0.006 grams Marking: BAS116TW :PA BAV199S :PB ABSOLUTE RATINGS (each diode) PlARAMETER Seymbo Vsalu Unit Reverse Voltage VR 7V5 Peak Reverse Voltage VRM 1V00 Continuous Forward Current I F 0A.2 Non-repetitive Peak Forward Surge Current at t=1.0us I FSM 2A.0 THERMAL CHARACTERISTICS PlARAMETER Seymbo Vsalu Unit Power Dissipation (Note 1) PTOT 2W00 m O Thermal Resistance, Junction to Ambient (Note 1) RJA 625 C/W O Junction Temperature TJ -55 to 150 C O Storage Temperature TSTG -55 to 150 C 6 5 4 6 5 4 NOTE: 1. FR-4 Board = 70 x 60 x 1mm. 1 2 3 1 2 3 Fig.48 Fig.32 BAS116TW BAV199S PAGE . 1 May 26,2016REV.01BAS116TW/BAW156DW/BAV170DW/BAV199S O ELECTRICAL CHARACTERISTICS (each diode) (TA=25 C, unless otherwise noted) PlA RA ME TE R Snymb oT.e s t C o nd i ti o M.INT.YPMsA X Uni t RVe ve rs e B re a k d o wn Vo lta g e (BR) IR=u1 0 0A 7V5 V R=V7 5 0 .0 0 2 5 RIe ve rs e C urre nt R nA O V R=T7 5 V, J=1 5 0 C 8 .0 8 0 IF=m1 A 0 .9 IF=m1 0 A 1 .0 FVo rwa rd Vo lta g e F V IF=m5 0 A 1 .1 IF=m1 5 0A 1 .2 5 TCo ta l C a p a c i ta nc e T V R=,0Vf=1 MH Z 2F.0 p Rte ve rs e Re c o ve ry Ti me IF=IR=m1 0 AR, L=1 0 0 3s.0 u rr CHARACTERISTIC CURVES (each diode) 1000 10 100 1.0 O TA=-25 C 10 0.1 VR=75V O 1.0 T=A 75C 0.01 O T=A 25C O T=A 125C 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 50 100 150 200 VF, Forward Voltage (V) Tj, Junction Temperature (Deg C) Fig. 1-Reverse Leakage vs. Junction Temperature Fig. 2-Forward Current vs. Forward Voltage 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 20406080 100 VR, Reverse Voltage (V) Fig. 3- Total capacitance vs. Reverse Voltage May 26,2016REV.01 PAGE . 2 IR, Reverse Leakage(nA) CT, Total Capacitance (pF) IF, Forward current (mA)