X-On Electronics has gained recognition as a prominent supplier of BAW156_R1_00001 Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. BAW156_R1_00001 Small Signal Switching Diodes are a product manufactured by Panjit. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

BAW156_R1_00001 Panjit

BAW156_R1_00001 electronic component of Panjit
BAW156_R1_00001 Panjit
BAW156_R1_00001 Small Signal Switching Diodes
BAW156_R1_00001  Semiconductors

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Part No. BAW156_R1_00001
Manufacturer: Panjit
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes 100V,Small Signal Switching Diodes,SOT-23,4A
Datasheet: BAW156_R1_00001 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.0935 ea
Line Total: USD 0.09 
Availability - 2648
Ship by Wed. 15 Jan to Fri. 17 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2648
Ship by Wed. 15 Jan to Fri. 17 Jan
MOQ : 1
Multiples : 1
1 : USD 0.0935
10 : USD 0.0605
100 : USD 0.0319
1000 : USD 0.0286
3000 : USD 0.0176
9000 : USD 0.0154

   
Manufacturer
Product Category
Product
Mounting Style
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BAW156_R1_00001 from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAW156_R1_00001 and other electronic components in the Small Signal Switching Diodes category and beyond.

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BAS116/BAW156/BAV170/BAV199 SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES 100 Volt POWER 250mWatt VOLTAGE FEATURES Suface mount package ideally suited for automatic insertion. 0.120(3.04) 0.110(2.80) Very low leakage current. 2pA typical at VR=75V. Low capacitance. 2pF max at VR=0V, f=1MHz Lead free in compliance with EU RoHS 2011/65/EU directive 0.056(1.40) MECHANICAL DATA 0.047(1.20) Case: SOT-23 plastic 0.008(0.20) 0.079(2.00) 0.003(0.08) 0.070(1.80) Terminals: Solderable per MIL-STD-750, Method 2026 Approx weight: 0.0003 ounces, 0.084 grams Marking: BAS116: PA 0.004(0.10) 0.044(1.10) 0.000(0.00) 0.035(0.90) BAW156: P4 0.020(0.50) BAV170: P3 0.013(0.35) BAV199: PB ABSOLUTE RATINGS (each diode) PARAMETER Symbol Value Units Reverse Voltage V R 75 V Peak Reverse Voltage V RM 100 V Continuous Forward Current I F 0.2 A Non-repetitive Peak Forward Surge Current at t=1.0us I FSM 4.0 A THERMAL CHARACTERISTICS PARAMETER Symbol Value Units Power Dissipation (Note 1) P TOT 250 mW O Thermal Resistance, Junction to Ambient (Note 1) RJA 500 C/W O Junction Temperature T J -55 to 150 C O Storage Temperature TSTG -55 to 150 C NOTE: SERIES COMMON CATHODE COMMON ANODE SINGLE 1. FR-5 Board = 1.0 x 0.75 x 0.062 in. BAS116 BAW156 BAV170 BAV199 September 22,2015-REV.01 PAGE . 1 0.006(0.15)MIN.BAS116/BAW156/BAV170/BAV199 O ELECTRICAL CHARACTERISTICS (each diode) (TA=25 C, unless otherwise noted) PlA RA ME TE R Snymb oT.e s t C o nd i ti o M.INT.YPMA X Uni ts RVe ve rs e B re a k d o wn Vo lta g e (BR) IR=u1 0 0A 75 - -V V R=V7 5 - 0 .0 0 2 5 RIe ve rs e C urre nt R nA O V R=T7 5 V, J=1 5 0 C - 8 .0 8 0 IF=m1 A - - 0 .9 - - IF=m1 0 A 1 .0 FVo rwa rd Vo lta g e F V IF=m5 0 A - - 1 .1 IF=m1 5 0A - - 1 .2 5 TCo ta l C a p a c i ta nc e V R=,0Vf=1 MH Z 2 .0 pF - - J - - Rte ve rs e Re c o ve ry Ti me IF=IR=m1 0 AR, L=1 0 0 3 .0 us rr CHARACTERISTIC CURVES (each diode) 1000 10 100 1.0 O TA=-25 C 10 0.1 VR=75V O T=A 75C 1.0 0.01 O T=A 25C O T=A 125C 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 50 100 150 200 VF, Forward Voltage (V) Tj, Junction Temperature (Deg C) Fig. 1-Reverse Leakage vs. Junction Temperature Fig. 2-Forward Current vs. Forward Voltage 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 20406080 100 VR, Reverse Voltage (V) Fig. 3- Total capacitance vs. Reverse Voltage September 22,2015REV.01 PAGE . 2 IR, Reverse Leakage(nA) CT, Total Capacitance (pF) IF, Forward current (mA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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