LL4448 FAST SWITCHING SURFACE MOUNT DIODES POWER 500 mW VOLTAGE 100 Volts FEATURES Fast switching Speed. Surface Mount Package Ideally Suited For Automatic Insertion. Silicon Epitaxal Planar Construction. Lead free in comply with EU RoHS 2011/65/EU directives 0.020(0.5) 0.020(0.5) MECHANICAL DATA 0.012(0.3) 0.012(0.3) Case: MINI MELF 0.146(3.7) 0.130(3.3) Terminals: Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band Marking: Cathode Band Only Weight: 0.03 grams(approx) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25C unless otherwise noted) PARAMETER SYMBOL VALUE UNITS Peak Reverse Voltage VRM 100 V Maximum DC Blocking Voltage VDC 75 V O Maximum Average Forward Current at TA=25 C And f >50Hz I F(AV) 150 mA O Surge Forward Current at t < 1s and TJ=25 C I FSM 500 mA O Power Dissipation at TA= 25 C PTOT 500 mW Maximum Forward Voltage at I =100mA VF 1.0 V F Maximum Leakage Current at V =20V I R 25 nA R O at V =20V ,TJ= 150 C 50 A R Maximum Capacitance at V =V =0 CJ 4 pF F R Maximum Reverse Recovery Time From t 4 ns rr I = -I =10mA to I = -1mA ,V =6V R =100 F R RR R L O Typical Maximum Thermal Resistance RJA 350 C / W Operating Junction Temperature and Storage Temperature O TJ,TSTG -65 to +175 C Range NOTE: 1. CJ at VR=0, f=1MHZ 2. From IF=10mA to IR=1mA, VR=6Volts, RL=100 PAGE . 1 May 16,2012-REV.07 0.063(1.6) 0.055(1.4)DIA.LL4448 10 100 O TA=150 C O TA=125 C 1.0 10 O T=A 85 C 0.1 O T=A 55 C 1.0 0.01 O T=A 25 C 0.001 0.1 0 10 20 30 40 50 0.2 0.4 0.6 0.8 1.0 1.2 REVERSE VOLTAGE, Volts FORWARD VOLTAGE, Volts LEAKAGE CURRENT FORWARD VOLTAGE 6.0 4.5 2nF 60 W V=RF2V 5k W Vo 3.5 1.5 0 0 24 6 8 RECTIFICATION EFFCIENCY MEASUREMENT CIRCUIT REVERSE VOLTAGE, Volts TYPICAL CAPATICANCE May 16,2012-REV.07 PAGE . 2 FORWARD CURRENT,mA DIODE CAPACITANCE, pF REVERSE CURRENT,Am