PCDD0665G1 Silicon Carbide Schottky Barrier Diode 650 V 6 A VRRM IF TO-252AA Q VF(Typ.) 1.5 V C 11.3 nC Features Temperature Independent Switching Behavior High Surge Current Capability Positive Temperature Coefficient on VF Low Conduction Loss o Zero Reverse Recovery o High junction temperature 175 C Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case: TO-252AA molded plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0113 ounces, 0.3217 grams Application PFC, UPS, PV Inverter, EV Charging Station, Welder o Maximum Ratings and Thermal Characteristics (TC = 25 C unless otherwise specified) PARAMETER SYMBOL LIMIT UNITS Repetitive Peak Reverse Voltage VRRM 650 V DC Blocking Voltage V 650 V DC o Continuous forward current TC= 150 C IF 6 A o Repetitive Peak Surge Current T = 25 C , t =10ms 24 C p I A FRM o Half Sine Wave, D=0.1 T =125 C , t =10ms 20 C p o Peak Forward Surge Current TC= 25 C , tp =10ms 28 A o Half Sine Wave TC=125 C , tp =10ms 24 IFSM Peak Forward Surge Current 320 A t =10us, Pulse p Maximum Power Dissipation Ptotal 64.9 W o Operating Junction Temperature Range T -55~175 C J o Storage Temperature Range TSTG -55~175 C September 15,2021 PCDD0665G1-REV.00 Page 1 PCDD0665G1 o Electrical Characteristics (TC = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS o IF = 6 A, TJ = 25 C - 1.5 1.7 Forward voltage drop V V F o IF = 6 A, TJ = 175 C - 1.8 - o - 2 50 A VR = 650 V, TJ = 25 C Reverse leakage current I R o - 0.03 - mA VR = 650 V, TJ = 175 C Total Capacitive Charge QC - 11.3 - nC IF = 6 A, VR = 400V VR = 1V, f = 1MHz - 228 - pF Total Capacitance C VR = 200V, f = 1MHz - 18.9 - pF VR = 400V, f = 1MHz - 13.3 - pF Capacitance Stored Energy EC VR = 400V - 1.59 - J o Thermal Resistance R JC - 2.31 - C/W September 15,2021 PCDD0665G1-REV.00 Page 2