PPJA3413 20V P-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm) Voltage -20 V Current -3.4A Features RDS(ON) , VGS -4.5V, ID -3.4A<82m RDS(ON) , VGS -2.5V, ID -2.2A<110m RDS(ON) , VGS -1.8V, ID -1.2A<146m Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-23 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams Marking: A13 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V -20 V DS Gate-Source Voltage V +12 V GS Continuous Drain Current I -3.4 A D Pulsed Drain Current I -13.6 A DM o T =25 C 1.25 W a Power Dissipation P D o o Derate above 25C 10 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 100 JA - Junction to Ambient C/W February 17,2014-REV.00 Page 1 PPJA3413 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I=-250uA -20 - - V DSS GS D Gate Threshold Voltage V V =V , I=-250uA -0.4 -0.65 -1.2 V GS(th) DS GS D V =-4.5V, I=-3.4A - 65 82 GS D Drain-Source On-State Resistance R V =-2.5V, I=-2.2A - 82 110 m DS(on) GS D V =-1.8V, I=-1.2A - 103 146 GS D Zero Gate Voltage Drain Current I V =-20V, V=0V - 0.01 -1 uA DSS DS GS Gate-Source Leakage Current I V =+12V, V=0V - +10 +100 nA GSS GS DS Dynamic Total Gate Charge Q - 7 - g V =-10V, I =-3.4A, DS D Gate-Source Charge Q - 1 - nC gs (Note 1,2) V =-4.5V GS Gate-Drain Charge Q - 1.8 - gd Input Capacitance Ciss - 522 - V =-10V, V =0V, DS GS Output Capacitance Coss - 55 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 40 - Switching Turn-On Delay Time td - 10 - (on) V =-10V, I =-3.4A, DD D Turn-On Rise Time tr 4 - V =-4.5V, ns GS Turn-Off Delay Time td - 34 - (off) (Note 1,2) R =6 G Turn-Off Fall Time tf 5 Drain-Source Diode Maximum Continuous Drain-Source I --- - - -1.5 A S Diode Forward Current Diode Forward Voltage V I =-1.0A, V=0V - 0.77 -1.2 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper 4. The maximum current rating is package limited February 17,2014-REV.00 Page 2