PPJE5V0U8TB-AU Ultra Low Capacitance ESD Protection 5 V V RWM Features IEC61000-4-2(ESD): 18kV Air, 12kV Contact Compliance IEC61000-4-4(EFT): 40A(5/50nS) IEC61000-4-5(Lightning): 4A(8/20 S) Low leakage current, maximum 1 A at rated voltage Acquire quality system certificate : TS16949 AEC-Q101 qualified Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std..(Halogen Free) Mechanical Data Case: SOT-523, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.00007 ounces, 0.002 grams Applications USB3.0 Data Line Protection High Definition Multi-Media Interface Protection Monitors and Flat Panel Displays Notebook computers Video Line Protection & Base Stations 10/100/1000 Ethernet Fig.25(Top View) HDSL, IDSL Secondary IC Side Protection Control Signal Lines Protection o Maximum Ratings (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS ESD IEC61000-4-2(Air) 18 V kV ESD ESD IEC61000-4-2(Contact) 12 o Operating Junction Temperature Range T -55 to +150 C J o Storage Temperature Range T -55 to +150 C STG May 4,2016-REV.03 Page 1 PPJE5V0U8TB-AU o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Reverse Stand-Off Voltage V - - - 5 V RWM I =1mA, BR Reverse Breakdown Voltage V Between any I/O pins 5.8 - 10.2 V BR to GND V =5V, R Reverse leakage current I - - 1 A R any I/O pin to GND I =1A, t =8/20 s, PP P - 9 12 any I/O pin to GND Clamping Voltage V V CL I =4A, t =8/20 s, PP P - - 15 any I/O pin to GND I =4A, t =100ns, PP P - 9.6 - any I/O pin to GND (Note 1) Clamping Voltage TLP V V CL I =8A, t =100ns, PP P - 10.6 - any I/O pin to GND (Note 1) Dynamic Resistance R t =100ns - 0.25 - DYN P 0Vdc Bias f=1MHz, Off State Junction Capacitance C Between any I/O pins - 0.6 0.8 pF J to GND NOTES : 1. Testing using Transmission Line Pulse (TLP) conditions: Z = 50 , t = 100 ns. 0 P May 4,2016-REV.03 Page 2