PJSD12LCFN2 BI-DIRECTIONAL ESD PROTECTION DIODE This bi-directional TVS has been designed to protect sensitive equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 12Vdc and below.This offers an integrated solution to protect a single data line where the board space is a premium. SPECIFICATION FEATURES 115W Power Dissipation (8/20 s Waveform) Low Leakage Current, Maximum of 0.1 A 12Vdc 0.042(1.05) 0.022(0.55) Very low Clamping voltage 0.037(0.95) 0.017(0.45) IEC 61000-4-2 ESD +30kV air, +30kV Contact Compliance Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) Green molding compound as per IEC61249 Std (Halogen Free) 0.002(0.05) MECHANICAL DATA MAX. Terminals : Solderable per MIL-STD-750, Method 2026 0.013(0.32) Approx. Weight: 0.00004 ounces ,0.001 grams 0.008(0.22) Case : DFN 2L, Plastic Marking : BX APPLICATIONS PIN NO.1 IDENTIFICATION Video I/O ports protection Set Top Boxes Portable Instrumentation o MAXIMUM RATINGS (TA=25 C unless otherwise noted) RATING SYMBOL VALUE UNITS Peak Pulse Power (8/20 s Waveform) 115 W PPP Peak Pulse Current (8/20 s Waveform) 5 A I PPM ESD Voltage per IEC61000-4-2 (Contact) VESD + 30 kV ESD Voltage per IEC61000-4-2 (Air) + 30 kV VESD ESD Voltage (HBM) + 8 kV VESD O Operating Juncti on and Storage Temperature Range TJ,TS TG -55 to +150 C May 12,2017-REV.01 PAGE . 1 0.026(0.65) 0.022(0.55) 0.022(0.55) 0.017(0.45)PJSD12LCFN2 o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Reverse Stand-Off Voltage VRWM - - 12 V Reverse Breakdown Voltage VBR I BR=1mA 13 - - V Reverse Leakage Current I R VR=12V - - 0.1 A I PP=1A - - 20 Clamping Voltage (8/20s) VC V I PP=5A - - 23 Off State Junction Capacitance CJ 0 Vdc Bias f=1MHz - 15 - pF TYPICAL CHARACTERISTIC CURVES 5 4.5 100 4 90 50% of I pp 20 s 3.5 80 70 3 60 50 2.5 40 30 2 20 Rise time 10-90%-8 s 1.5 10 0 1 0 5 10 15 20 25 30 14 15 16 17 18 19 20 time, s Vc, Clamping Voltage (V) Fig.1 Typical peak clamping voltage(8/20S) Fig.2 Pulse Waveform 16 0.1 14 12 0.05 10 8 0 6 4 -0.05 2 0 -0.1 0 2 4 6 8 10 12 -15 -10 -5 0 5 10 15 V , Reverse Bias Voltage (V) V , Reverse Voltage (V) R R Fig.3 Typical Junction Capacitance Fig.4 Typical Reverse Characteristics PAGE . 2 May 12,2017-REV.01 C , Junction Capacitance (pF) Ipp, Peak Pulse Current (A) J I ,Reverse Current (A) R Percent of Ipp