SiC04A065T SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 4 A TO-220AC Unit: inch(mm) Features Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on V F Fast Reverse Recovery Mechanical Data Case: Molded plastic, TO-220AC Marking: 04A065T Benefits High Frequency Operation Higher System Efficiency Environmental Protection Parallel Device Convenience Hard Switching & High Reliability High Temperature Application Maximum Ratings PARAMETER SYMBOL TEST CONDITIONS VALUE UNITS o Maximum Repetitive Peak Reverse Voltage VRRM TJ=25 C 650 V o Maximum RMS Voltage VRSM TJ=25 C 650 V o Maximum DC Blocking Voltage VR TJ=25 C 650 V o TC=25 C 11 A o Continuous Forward Current IF(AV) TC=125 C 6 A o TC=150 C 4 A o TC=25 C 26 A Repetitive Peak Forward Surge Current I FRM o (T =10mS, Half Sine Wave, D=0.1) TC=125 C 23 A P February 11,2015-REV.01 Page 1 SiC04A065T Maximum Ratings PARAMETER SYMBOL TEST CONDITIONS VALUE UNITS o Non-Repetitive Peak Forward Surge Current TC=25 C 29 A o (T =10mS, Half Sine Wave) TC=125 C 24 A P I FSM Non-Repetitive Peak Forward Surge Current o TC=25 C 127 A (T =10uS, Pulse) P o TC=25 C 75 W Power Dissipation P D o TC=125 C 25 W o Operating Junction Temperature T 175 C J o Storage Temperature T -55 to 175 C STG o Thermal Resistance Junction to Case R 2 C/W JC Electrical Characteristics PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS o DC Blacking Voltage V I =100uA, TJ=25 C 650 770 - V DC R o I =4A, TJ=25 C - 1.5 1.8 V F Forward Voltage V F o I =4A, TJ=175 C - 1.9 2.2 V F o V =650V, TJ=25 C - 1 50 uA R Reverse Current I R o V =650V, TJ=175 C - 6 190 uA R I =4A, di/dt=300A/uS, F Total Capacitive Charge Q - 11 - nC C o V =400V, TJ=25 C R o V =1V, TJ=25 C, f=1MHz - 155 - pF R o Total Capacitance C V =200V, TJ=25 C, f=1MHz - 25 - pF R o V =400V, TJ=25 C, f=1MHz - 25 - pF R February 11,2015-REV.01 Page 2