The PSD04N65B with MOSFET N Trench 650V 4A (Tc) 4V @ 250uA 2.5O @ 2A,10V TO-252 RoHS is a power MOSFET manufactured by PIP (formerly Power Integrations, Inc.). It is a high-voltage, low-to-medium current transistor designed primarily for switching applications. It has a maximum drain-source Voltage of 650V, a maximum drain current of 4A, and a maximum Rds(on) of 2.5O. It also has a maximum voltage between gate-source of 10V. It is packaged in the TO-252 RoHS package, and is suitable for use in a wide variety of applications including power supplies, motor drives, and more.