Product Information

PTA26N65

PTA26N65 electronic component of PIP

Datasheet
TO-220F-3 MOSFETs ROHS
Manufacturer: PIP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4412 ea
Line Total: USD 1.44

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Tue. 04 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 1.3516
10 : USD 1.1523
30 : USD 1.0414
100 : USD 0.9185
500 : USD 0.8622
1000 : USD 0.8379

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
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Additional Infomation About Product

The PTA26N65 with TO-220F-3 MOSFETs ROHS is a MOSFET transistor manufactured by PIP. It is a fast switching N-channel Enhancement-Mode Power MOSFET with Zero Gate Charge designed for a range of switching mode power supplies, general purpose high side switching applications, and power switching applications. It is packaged in a TO-220F-3 package which is a small three-pin device that is RoHS compliant and environmentally-friendly. The pin definition is Source, Gate, and Drain and the maximum drain-source voltage is up to 650V. The PTA26N65 is rated for Continuous Drain Current of 26A and it has an RDS(on) of 8.5mohm. It also features an operating temperature range from -55 °C to + 175°C. It also has a maximum power dissipation is 145W.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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