The PDN6911S is a MOSFET field-effect transistor manufactured by Potens. The device comes in a SOT-23-3S RoHS (Restriction of Hazardous Substances) package and features 60V drain-source voltage rating, 2A drain-source current, 2.5V (Tc) threshold voltage, 250uA gate leakage, 10V gate-source voltage, and a 190 mO on-state resistance at 2A drain-source current. The transistor is also AEC-Q101 qualified, making it suitable for automotive applications. This MOSFET is designed to withstand short-circuit protection, back-to-back the safe operating area, and high-side p-channel power switches.