X-On Electronics has gained recognition as a prominent supplier of PDN6911S MOSFETs across the USA, India, Europe, Australia, and various other global locations. PDN6911S MOSFETs are a product manufactured by Potens. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PDN6911S Potens

PDN6911S electronic component of Potens
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Part No.PDN6911S
Manufacturer: Potens
Category: MOSFETs
Description: MOSFET P Trench 60V 2A (Tc) 2.5V @ 250uA 190 mΩ @ 2A,10V SOT-23-3S RoHS
Datasheet: PDN6911S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PDN6911S from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PDN6911S and other electronic components in the MOSFETs category and beyond.

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The PDN6911S is a MOSFET field-effect transistor manufactured by Potens. The device comes in a SOT-23-3S RoHS (Restriction of Hazardous Substances) package and features 60V drain-source voltage rating, 2A drain-source current, 2.5V (Tc) threshold voltage, 250uA gate leakage, 10V gate-source voltage, and a 190 mO on-state resistance at 2A drain-source current. The transistor is also AEC-Q101 qualified, making it suitable for automotive applications. This MOSFET is designed to withstand short-circuit protection, back-to-back the safe operating area, and high-side p-channel power switches.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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