X-On Electronics has gained recognition as a prominent supplier of PSS15S92F6-AG across the USA, India, Europe, Australia, and various other global locations. PSS15S92F6-AG are a product manufactured by Powerex. We provide cost-effective solutions for PSS15S92F6-AG, ensuring timely deliveries around the world.

PSS15S92F6-AG Powerex

PSS15S92F6-AG electronic component of Powerex
Images are for reference only
See Product Specifications
Part No.PSS15S92F6-AG
Manufacturer: Powerex
Category: Unclassified
Description: IPM, IGBT, 15A, 1.5KV, DIP
Datasheet: PSS15S92F6-AG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 19.3128 ea
Line Total: USD 19.31 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 19.3128
10 : USD 19.0008
25 : USD 18.6966
100 : USD 18.408
250 : USD 18.1272
500 : USD 17.9868

   
Manufacturer
Product Category
Ipm Power Device
Voltage Rating Vces / Vdss
Current Rating Ic / Id
Isolation Voltage
Ipm Case Style
Ipm Series
Ipm Mounting Type
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We are delighted to provide the PSS15S92F6-AG from our Powerex manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSS15S92F6-AG and other electronic components in the Powerex manufacturer and beyond.

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< Dual-In-Line Package Intelligent Power Module > PSS15S92F6-AG PSS15S92E6-AG TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS 3 phase DC/AC inverter 600V / 15A (CSTBT) N-side IGBT open emitter Built-in bootstrap diodes with current limiting resistor APPLICATION AC 100~240Vrms(DC voltage:400V or below) class low power motor control TYPE NAME PSS15S92F6-AG With temperature output function PSS15S92E6-AG With OT protection function INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS For P-side : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection For N-side : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC), Over temperature protection (OT, PSS15S92E6-AG only) Fault signaling : Corresponding to SC fault (N-side IGBT), UV fault (N-side supply) and OT fault Temperature output : Outputting LVIC temperature by analog signal (PSS15S92F6-AG only) Input interface : 3, 5V line, Schmitt trigger receiver circuit (High Active) UL Recognized : UL1557 File E323585 INTERNAL CIRCUIT P(24) IGBT1 V (2) UFB Di1 V (3) VFB U(23) IGBT2 Di2 VWFB(4) HVIC U (5) P V(22) V (6) P IGBT3 Di3 W (7) P V (8) P1 W(21) V (9) IGBT4 NC Di4 U (10) N NU(20) V (11) N IGBT5 Di5 W (12) N V (13) N1 NV(19) LVIC F (14) O IGBT6 Di6 CIN(15) V (16) NC NW(18) V (17) OT Built-in temperature output type: V OT (PSS**S92F6-AG) Built-in OT type: NC (No Connection) (PSS**S92E6-AG) Publication Date : October 2013 1 < Dual-In-Line Package Intelligent Power Module > PSS15S92F6-AG, PSS15S92E6-AG TRANSFER MOLDING TYPE INSULATED TYPE MAXIMUM RATINGS (T = 25C, unless otherwise noted) j INVERTER PART Symbol Parameter Condition Ratings Unit V Supply voltage Applied between P-NU,NV,NW 450 V CC V Supply voltage (surge) Applied between P-NU,NV,NW 500 V CC(surge) V Collector-emitter voltage 600 V CES I Each IGBT collector current T = 25C 15 A C C I Each IGBT collector current (peak) T = 25C, less than 1ms 30 A CP C P Collector dissipation T = 25C, per 1 chip 27.0 W C C T Junction temperature (Note 1) -30~+150 C j Note1: The maximum junction temperature rating of built-in power chips is 150C( Tc100C).However, to ensure safe operation of DIPIPM, the average junction temperature should be limited to Tj(Ave)125C ( Tc100C). CONTROL (PROTECTION) PART Symbol Parameter Condition Ratings Unit V Control supply voltage Applied between V -V , V -V 20 V D P1 NC N1 NC V Control supply voltage Applied between V -U, V -V, V -W 20 V DB UFB VFB WFB V Input voltage Applied between U , V , W -V , U , V , W -V -0.5~V +0.5 V IN P P P PC N N N NC D VFO Fault output supply voltage Applied between FO-VNC -0.5~VD+0.5 V I Fault output current Sink current at F terminal 1 mA FO O V Current sensing input voltage Applied between CIN-V -0.5~V +0.5 V SC NC D TOTAL SYSTEM Symbol Parameter Condition Ratings Unit Self protection supply voltage limit V = 13.5~16.5V, Inverter Part D V 400 V CC(PROT) (Short circuit protection capability) T = 125C, non-repetitive, less than 2s j T Module case operation temperature Measurement point of Tc is provided in Fig.1 -30~+100 C C T Storage temperature -40~+125 C stg 60Hz, Sinusoidal, AC 1min, between connected all pins V Isolation voltage 1500 V iso rms and heat sink plate Fig. 1: T MEASUREMENT POINT C Control terminals DIPIPM 11.6mm 3mm IGBT chip position Tc point Heat sink side Power terminals THERMAL RESISTANCE Limits Symbol Parameter Condition Unit Min. Typ. Max. R Inverter IGBT part (per 1/6 module) - - 3.7 K/W th(j-c)Q Junction to case thermal R resistance (Note 2) Inverter FWDi part (per 1/6 module) - - 4.5 K/W th(j-c)F Note 2: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100m~+200m on the contacting surface of DIPIPM and heat sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal conductivity of the applied grease. For reference, Rth(c-f) is about 0.3K/W (per 1/6 module, grease thickness: 20m, thermal conductivity: 1.0W/mK). Publication Date : October 2013 2

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