LXA08B600 Power Integrations

LXA08T600, LXA08B600, LXA08FP600 Qspeed Family 600 V, 8 A X-Series PFC Diode Product Summary General Description I 8 A F(AVG) This device has the lowest Q of any 600V RR V 600 V RRM Silicon diode. Its recovery characteristics Q (Typ at 125 C) 82 nC RR increase efficiency, reduce EMI and eliminate I (Typ at 125 C) 3.5 A RRM snubbers. Softness t /t (Typ at 125 C) 0.55 b a Applications Power Factor Correction (PFC) Boost Diode Pin Assignment Motor drive circuits DC-AC Inverters KK KKK Features NCNCNC KK KKK Low Q , Low I , Low t RR RRM RR AA High dI /dt capable (1000A/s) F AA Soft recovery TO-220AC TO-263AB FullPak Insulation = 2500V RMS LXA08T600 LXA08B600 Benefits Increases efficiency KK Eliminates need for snubber circuits AA Reduces EMI filter component size & count Enables extremely fast switching AKAK TO-220 FullPak RoHS Compliant LXA08FP600 Package uses Lead-free plating and Green mold compound. Halogen free per IEC 61249-2-21. Absolute Maximum Ratings Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol Parameter Conditions Rating Units V Peak repetitive reverse voltage 600 V RRM T = 150 C, T = 122 C (220AC, 263AB) 8 A J C I Average forward current F(AVG) T = 150 C, T = 81C. (FullPak) J C I Non-repetitive peak surge current 60 Hz, cycle 60 A FSM I Non-repetitive peak surge current cycle of t=28 s Sinusoid, T =25 C 350 A FSM C T Maximum junction temperature 150 C J(MAX) T Storage temperature 55 to 150 C STG Lead soldering temperature Leads at 1.6 mm from case, 10 sec 300 C T = 25 C. (220AC, 263AB) 83 W C P Power dissipation D T = 25C. (FullPak) 34 W C www.powerint.com January 2011 LXA08T600/8B600/8FP600 Thermal Resistance Symbol Resistance from: Conditions Rating Units Junction to ambient TO-220AC (Only) 62 C/W R JA TO-220AC, TO-263AB 1.5 C/W R Junction to case JC TO-220AC FullPak 3.7 C/W 2 www.powerint.com Rev 1.10 01/11