Single Phase PSB 36 I = 30 A dAV Rectifier Bridge V = 800-1800 V RRM Preliminary Data Sheet V V Type RSM RRM + V V DRM DSM (V) (V) ~ 800 800 PSB 36/08 ~ 1200 1200 PSB 36/12 1400 1400 PSB 36/14 - 1600 1600 PSB 36/16 1800 1800 PSB 36/18 Symbol Test Conditions Maximum Ratings Features I T = 62 C, (per module) 30 A dAVM C Package with 1/4 fast-on terminals I T = 45 C t = 10 ms (50 Hz), sine 550 A FSM VJ Isolation voltage 3000 V V = 0 t = 8.3 ms (60 Hz), sine 600 A R Planar glass passivated chips T = T t = 10 ms (50 Hz), sine 500 A VJ VJM Blocking voltage up to 1800 V V = 0 t = 8.3 ms (60 Hz), sine 550 A R Low forward voltage drop 2 i dt T = 45 C t = 10 ms (50 Hz), sine 1520 As VJ UL registered E 148688 V = 0 t = 8.3 ms (60 Hz), sine 1520 As R T = T t = 10 ms (50 Hz), sine 1250 As Applications VJ VJM V = 0 t = 8.3 ms (60 Hz), sine 1250 As R Supplies for DC power equipment T -40... + 150 C VJ Input rectifier for PWM inverter T 150 C VJM Battery DC power supplies T -40... + 150 C stg Field supply for DC motors V 50/60 Hz, RMS t = 1 min 2500 V ISOL I 1 mA t = 1 s 3000 V ISOL Advantages M Mounting torque (M5) 2 Nm d Weight typ. 20 g Easy to mount with one screw Space and weight savings Improved temperature and power cycling capability Symbol Test Conditions Characteristic Value Package style and outline I V = V T = T 0.3 mA R R RRM, VJ VJM Dimensions in mm (1mm = 0.0394) V = V T = 25C 2.0 mA R RRM, VJ V I = 150 A, T = 25 C 1.7 V F F VJ V For power-loss calculations only 0.8 V TO r 5.8 m T R per diode DC 6.2 K/W thJC per module 1.55 K/W R per diode DC 7.4 K/W thJK per module 1.85 K/W d Creeping distance on surface 12.7 m m s d Creeping distance in air 9.4 mm A a Max. allowable acceleration 50 m/s Data according to IEC 60747 refer to a single diode unless otherwise stated POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 204 I 200 10 F(OV) ------ I FSM 1:T = 150C 2 I (A) VJ As FSM A TVJ=45C TVJ=150C 2:T = 25C VJ 1.6 480 500 150 1.4 1.2 3 10 100 TVJ=45C 1 TVJ=150C 0 V RRM 0.8 50 1/2 V RRM 1 V 0.6 RRM I 1 F 2 2 0.4 10 0 0 1 2 3 1 2 4 6 10 0.5 1 1.5 2 2.5 10 10 t ms 10 10 t ms V V F 2 Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 i dt versus time per diode I : Crest value. (1-10ms) per diode (or thyristor) voltage drop per diode FSM t: duration 70 50 TC W 55 PSB 36 50 0.36 = RTHCA K/W 60 DC 60 65 A 0.71 sin.180 70 rec.120 40 75 rec.60 50 80 rec.30 85 1.43 90 30 40 95 100 105 30 2.86 110 20 115 DC 120 20 125 sin.180 10 7.14 130 rec.120 135 10 I rec.60 dAV 140 rec.30 145 PVTOT 0 C 150 0 50 100 150 200 20 0 50 100 150 T (C) C IFAVM A Tamb K Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature 8 K/W Z thJK 6 Z thJC 4 2 Z th 0.01 0.1 1 10 t s Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20